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參數(shù)資料
| 型號(hào)： | RF1S70N03SM |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 70A, 30V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs |
| 中文描述： | 70 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 588K |
| 代理商： | RF1S70N03SM |
3-47
RFP70N03, RF1S70N03, RF1S70N03SM
Typical Performance Curves
FIGURE 1. SAFE-OPERATING AREA CURVE
FIGURE 2. UNCLAMPED INDUCTIVE-SWITCHING
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE4. NORMALIZED POWER DISSIPATION vs TEMPERA-
TURE DERATING CURVE
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS
FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS
300
100
10
1
1
10
50
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
CASE TEMPERATURE (T
C
) = +25
o
C
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
V
DSS
MAX = 30V
100
μ
s
1ms
10ms
100ms
DC
I
D
,
300
I
DM
100
0.01
10
0.10
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= +25
o
C
STARTING T
J
= +150
o
C
t
AV
= (L) (I
AS
)/(1.3 x RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R) ln [(I
AS
x R)/(1.3 x RATED BV
DSS
- V
DD
) +1]
If R = 0
I
A
,
1.0
10.0
0
T
C
, CASE TEMPERATURE (
o
C)
10
20
30
40
50
60
70
80
25
50
75
100
125
150
175
I
D
,
0
T
C
, CASE TEMPERATURE (
o
C)
0.2
0.4
0.6
0.8
1.0
1.2
0
25
50
75
100
125
175
150
P
PULSE DURATION = 250
μ
s, T
C
= +25
o
C
V
GS
= 8V
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
0.0
1.5
3.0
4.5
6.0
7.5
I
D
,
0
40
80
120
160
200
V
GS
= 7V
V
GS
= 6V
V
GS
= 5V
V
GS
= 4V
V
GS
= 10V
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
0.0
2.0
4.0
6.0
8.0
10.0
I
D
,
0
40
80
120
160
200
+25
o
C
-55
o
C
+175
o
C
PULSE TEST
PULSE DURATION = 250
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RF1S70N06 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RF1S70N06SM | 功能描述:MOSFET TO-263 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1S70N06SM9A | 功能描述:MOSFET TO-263 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1S70N06SM9AR4570 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S70ND6SM9A | 制造商:Harris Corporation 功能描述: |
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