參數(shù)資料
型號(hào)： RF1S70N03SM
廠(chǎng)商： INTERSIL CORP
元件分類(lèi)： JFETs
英文描述： 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs
中文描述： 70 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁(yè)數(shù)： 4/16頁(yè)
文件大?。?/td> 142K
代理商： RF1S70N03SM
4
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 9. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
Typical Performance Curves
(Continued)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0
1.5
3.0
4.5
6.0
7.5
I
D
,
0
40
80
120
160
200
V
GS
= 7V
V
GS
= 6V
V
GS
= 5V
V
GS
= 4V
V
GS
= 8V
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
2
4
6
8
10
D
0
40
80
120
160
200
25
o
C
-55
o
C
175
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
N
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
O
V
GS
= 10V, I
D
= 70A
2.0
1.6
1.2
0.8
0
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
N
0.4
G
V
GS
= V
DS
, I
D
= 250
μ
A
2.0
1.6
1.2
0.4
0
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
N
0.8
B
I
D
= 250
μ
A
0
0
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
15
20
25
1000
2000
3000
5000
6000
7000
4000
C
C
ISS
C
OSS
C
RSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
= C
DS
+ C
GD
RFP70N03, RF1S70N03SM
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RF1S70ND6SM9A 制造商:Harris Corporation 功能描述:
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