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參數資料
| 型號： | RF1S70N03SM |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 70 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數： | 3/16頁 |
| 文件大?。?/td> | 142K |
| 代理商： | RF1S70N03SM |
3
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 5. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
0
T
C
, CASE TEMPERATURE (
o
C)
10
20
30
40
50
60
70
80
25
50
75
100
125
150
175
I
D
,
10
-5
Z
θ
J
,
t
1
, RECTANGULAR PULSE DURATION (s)
10
-4
10
-3
10
-2
10
-1
10
-0
10
1
10
-2
10
-1
10
0
SINGLE PULSE
0.01
0.5
0.2
0.1
0.05
0.02
NOTES:
DUTY FACTOR: D = t
1
/t
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
300
100
10
1
1
10
50
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
V
DSS(MAX)
= 30V
100
μ
s
1ms
10ms
100ms
DC
I
D
,
T
C
= 25
o
C
T
J
= MAX RATED
SINGLE PULSE
300
I
DM
100
0.01
10
0.10
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
t
AV
= (L) (I
AS
)/(1.3 x RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R) ln [(I
AS
x R)/(1.3 x RATED BV
DSS
- V
DD
) +1]
If R = 0
I
A
,
1
10
RFP70N03, RF1S70N03SM
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| RF1S70N03 | Monitor Shelf; External Height:15.72"; External Width:18.87"; External Depth:27.02"; Body Material:Steel; Color:Black; Leaded Process Compatible:No; Panel Width:19"; Peak Reflow Compatible (260 C):No; Enclosure Color:Black RoHS Compliant: No |
相關代理商/技術參數 |
參數描述 |
|---|---|
| RF1S70N06 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RF1S70N06SM | 功能描述:MOSFET TO-263 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1S70N06SM9A | 功能描述:MOSFET TO-263 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1S70N06SM9AR4570 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S70ND6SM9A | 制造商:Harris Corporation 功能描述: |
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