| 型號(hào): | RF1S70N03SM |
| 廠商: | INTERSIL CORP |
| 元件分類(lèi): | JFETs |
| 英文描述: | 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs |
| 中文描述: | 70 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁(yè)數(shù): | 13/16頁(yè) |
| 文件大?。?/td> | 142K |
| 代理商: | RF1S70N03SM |

相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFP70N03 | 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs |
| RFP70N06 | 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs |
| RFP70N03 | 70A, 30V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs |
| RFP70N06 | 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs |
| RF1S70N03 | Monitor Shelf; External Height:15.72"; External Width:18.87"; External Depth:27.02"; Body Material:Steel; Color:Black; Leaded Process Compatible:No; Panel Width:19"; Peak Reflow Compatible (260 C):No; Enclosure Color:Black RoHS Compliant: No |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RF1S70N06 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RF1S70N06SM | 功能描述:MOSFET TO-263 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1S70N06SM9A | 功能描述:MOSFET TO-263 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1S70N06SM9AR4570 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S70ND6SM9A | 制造商:Harris Corporation 功能描述: |