- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄374584 > RF1S640SM (FAIRCHILD SEMICONDUCTOR CORP) 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs PDF資料下載
參數(shù)資料
| 型號(hào)： | RF1S640SM |
| 廠(chǎng)商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大?。?/td> | 132K |
| 代理商： | RF1S640SM |
2001 Fairchild Semiconductor Corporation
IRF640, RF1S640, RF1S640SM Rev. B
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
1
1
I
D
,100
100
T
C
= 25
o
C
T
J
= MAX RATED
SINGLE PULSE
1000
OPERATION IN THIS AREA MAY BE
LIMITED BY r
DS(ON)
DC
100
μ
s
10
μ
s
1ms
10ms
T
C
= 25
o
C
1000
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
0
0
12
24
36
48
6
12
18
24
30
60
7V
6V
5V
4V
10V
8V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
6
0
1.0
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2.0
3.0
5.0
12
18
I
D
,
V
GS
= 6V
24
4.0
V
GS
= 7V
30
V
GS
= 8V
V
GS
= 10V
V
GS
= 5V
V
GS
= 4V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
4
6
8
10
2
V
GS
, GATE TO SOURCE VOLTAGE (V)
0.1
1
10
I
D
,
100
150
o
C
25
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DS
≥
50V
0
0.6
0.9
1.2
15
30
45
60
r
D
,
I
D
, DRAIN CURRENT (A)
75
1.5
0
0.3
V
GS
= 10V
V
GS
= 20V
O
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
N
3.0
1.8
1.2
0.6
0
-60 -40
-20
0
20
40
60
T
J
, JUNCTION TEMPERATURE (
o
C)
100 120 140
160
2.4
80
O
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 18A
IRF640, RF1S640, RF1S640SM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RF1S70N03SM | 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs |
| RFP70N03 | 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs |
| RFP70N06 | 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs |
| RFP70N03 | 70A, 30V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs |
| RFP70N06 | 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RF1S640SM9A | 功能描述:MOSFET USE 512-FQP19N20C RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1S644 | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 14A I(D) | TO-262AA |
| RF1S644SM | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 14A I(D) | TO-263AB |
| RF1S70N03 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S70N03SM | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。