參數(shù)資料
型號(hào): RF1S640SM
廠商: INTERSIL CORP
元件分類(lèi): JFETs
英文描述: 18A, 200V, 0.180 Ohm,, N-Channel PowerMOSFET(18A, 200V, 0.180 Ohm,N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管)
中文描述: 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁(yè)數(shù): 5/7頁(yè)
文件大?。?/td> 61K
代理商: RF1S640SM
4-212
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
1.25
1.05
0.95
0.85
0.75
-60
-40
-20
0
20
40
60
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
100 120 140 160
1.15
80
I
D
= 250
μ
A
3000
600
0
1
10
100
C
1800
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2400
1200
C
ISS
C
OSS
C
RSS
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
V
GS
= 0V, f = 1MHz
25
o
C
I
D
, DRAIN CURRENT (A)
g
f
,
0
0
6
12
18
24
3
6
9
12
15
30
150
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
0.8
1.2
1.6
2.0
0.4
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
1
10
100
I
S
,
1000
25
o
C
150
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
Q
g
, GATE CHARGE (nC)
V
G
,
0
0
15
30
45
60
4
8
12
16
20
75
I
D
= 28A
V
DS
= 100V
V
DS
= 160V
V
DS
= 40V
IRF640, RF1S640SM
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PDF描述
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