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參數(shù)資料
| 型號： | RF1S640 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 132K |
| 代理商： | RF1S640 |
2001 Fairchild Semiconductor Corporation
IRF640, RF1S640, RF1S640SM Rev. B
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
1.25
1.05
0.95
0.85
0.75
-60
-40
-20
0
20
40
60
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
100 120 140 160
1.15
80
I
D
= 250
μ
A
3000
600
0
1
10
100
C
1800
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2400
1200
C
ISS
C
OSS
C
RSS
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
V
GS
= 0V, f = 1MHz
25
o
C
I
D
, DRAIN CURRENT (A)
g
f
,
0
0
6
12
18
24
3
6
9
12
15
30
150
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
0.8
1.2
1.6
2.0
0.4
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
1
10
100
I
S
,
1000
25
o
C
150
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
Q
g
, GATE CHARGE (nC)
V
G
,
0
0
15
30
45
60
4
8
12
16
20
75
I
D
= 28A
V
DS
= 100V
V
DS
= 160V
V
DS
= 40V
IRF640, RF1S640, RF1S640SM
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PDF描述 |
|---|---|
| RF1S640SM | 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs |
| RF1S70N03SM | 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs |
| RFP70N03 | 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs |
| RFP70N06 | 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RF1S640SM | 功能描述:MOSFET N-Ch Power MOSFET 200V/18a/0.180 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1S640SM9A | 功能描述:MOSFET USE 512-FQP19N20C RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1S644 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 14A I(D) | TO-262AA |
| RF1S644SM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 14A I(D) | TO-263AB |
| RF1S70N03 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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