參數(shù)資料
型號(hào)： RF1S640
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
中文描述： 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
文件頁數(shù)： 2/7頁
文件大?。?/td> 132K
代理商： RF1S640
2001 Fairchild Semiconductor Corporation
IRF640, RF1S640, RF1S640SM Rev. B
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRF640, RF1S640, RF1S640SM
200
200
18
11
72
±
20
125
1.0
580
-55 to 150
UNITS
V
V
A
A
A
V
W
W/
o
C
mJ
o
C
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
300
260
o
C
o
C
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
TEST CONDITIONS
MIN
200
2
-
-
18
-
-
6.7
-
-
-
-
-
TYP
-
-
-
-
-
-
0.14
10
13
50
46
35
43
MAX
-
4
25
250
-
±
100
0.18
-
21
77
68
54
64
UNITS
V
V
μ
A
μ
A
A
nA
S
ns
ns
ns
ns
nC
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
I
D
= 250
μ
A, V
GS
= 0V, (Figure 10)
V
GS
= V
DS
, I
D
= 250
μ
A
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 125
o
C
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= 10V (Figure 7)
V
GS
=
±
20V
I
D
= 10A, V
GS
= 10V (Figures 8, 9)
V
DS
≥
10V, I
D
= 11A (Figure 12)
V
DD
= 100V, I
D
≈
18A, R
GS
= 9.1
, R
L
= 5.4
,
MOSFET Switching Times are Essentially
Independent of Operating Temperature
On-State Drain Current (Note 1)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 1)
Forward Transconductance (Note 1)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
I
D(ON)
I
GSS
r
DS(ON)
g
fs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
V
GS
= 10V, I
D
≈
18A, V
DS
= 0.8 x Rated BV
DSS
(Figure 14) Gate Charge is Essentially Independent
of Operating Temperature
I
G(REF)
= 1.5mA
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
-
-
-
-
-
-
8
-
-
-
-
-
-
nC
nC
pF
pF
pF
nH
22
V
DS
= 25V, V
GS
= 0V, f = 1MHz (Figure 11)
1275
400
100
3.5
Measured From the
Contact Screw on Tab to
Center of Die
Measured From the Drain
Lead, 6mm (0.25in) From
Package to Center of Die
Measured From the
Source Lead, 6mm
(0.25in) from Header to
Source Bonding Pad
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
4.5
-
nH
Internal Source Inductance
L
S
-
7.5
-
nH
Thermal Resistance Junction to Case
Thermal Resistance Junction to
Ambient
R
θ
JC
R
θ
JA
R
θ
JA
-
-
-
-
-
-
1
62
62
o
C/W
o
C/W
o
C/W
Free Air Operation, IRF640
RF1S640SM Mounted on FR-4 Board with Minimum
Mounting Pad
L
S
L
D
G
D
S
IRF640, RF1S640, RF1S640SM
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RF1S640SM 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RF1S640SM 功能描述:MOSFET N-Ch Power MOSFET 200V/18a/0.180 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RF1S640SM9A 功能描述:MOSFET USE 512-FQP19N20C RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RF1S644 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 14A I(D) | TO-262AA
RF1S644SM 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 14A I(D) | TO-263AB
RF1S70N03 制造商:Rochester Electronics LLC 功能描述:- Bulk
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