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參數(shù)資料
| 型號： | RF1S60P03SM |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs(60A, 30V, 0.027 Ω,P溝道功率MOS場效應管) |
| 中文描述： | 60 A, 30 V, 0.027 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數(shù)： | 7/7頁 |
| 文件大?。?/td> | 88K |
| 代理商： | RF1S60P03SM |
4-146
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PSPICE Electrical Model
.SUBCKT RFP60P03 2 1 3 REV 6/21/94
CA 12 8 5.01e-9
CB 15 14 3.9e-9
CIN 6 8 3.09e-9
DBODY 5 7 DBDMOD
DBREAK 7 11 DBKMOD
DPLCAP 10 6 DPLCAPMOD
EBREAK 5 11 17 18 -36.59
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 5 10 8 6 1
EVTO 20 6 8 18 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 4.92e-9
LSOURCE 3 7 2.36e-9
MOS1 16 6 8 8 MOSMOD M=0.99
MOS2 16 21 8 8 MOSMOD M=0.01
RBREAK 17 18 RBKMOD 1
RDRAIN 5 16 RDSMOD 1e-4
RGATE 9 20 3.25
RIN 6 8 1e9
RSOURCE 8 7 RDSMOD 11.28e-3
RVTO 18 19 RVTOMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 -0.92
.MODEL DBDMOD D (IS=4.21e-13 RS=1e-2 TRS1=-2.69e-4 TRS2=-1.33e-6 CJO=5.05e-9 TT=5.33e-8)
.MODEL DBKMOD D (RS=3.80e-2 TRS1=-4.76e-4 TRS2=-4.17e-12)
.MODEL DPLCAPMOD D (CJO=4.05e-9 IS=1e-30 N=10)
.MODEL MOSMOD PMOS (VTO=-3.98 KP=16.27 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL RBKMOD RES (TC1=8.05e-4 TC2=1.48e-6)
.MODEL RDSMOD RES (TC1=2.80e-3 TC2=2.62e-6)
.MODEL RVTOMOD RES (TC1=-3.34e-3 TC2=1.46e-6)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=7.5 VOFF=4.5)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=4.5 VOFF=7.5)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=1.43 VOFF=-3.57)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.57 VOFF=1.43)
.ENDS
NOTE: For further discussion of the PSPICE model consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options
; authors, William J. Hepp and C. Frank Wheatley.
EVTO
+
18
13
CA
CB
EGS
EDS
RIN
CIN
MOS1
MOS2
DBREAK
EBREAK
DBODY
LDRAIN
DRAIN
2
RSOURCE
LSOURCE
SOURCE
RBREAK
RVTO
19
VBAT
IT
VTO
DPLCAP
10
5
16
21
8
14
7
3
17
18
+
+
+
RDRAIN
S1A
S2A
S2B
S1B
12
15
13
8
14
13
6
8
+
-
5
8
-
-
8
RGATE
GATE
LGATE
20
9
1
ESG
+
-
6
8
11
+
-
17
18
6
RFG60P03, RFP60P03, RF1S60P03SM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFP60P03 | 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs |
| RFG60P03 | 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs(60A, 30V, 0.027 Ω,P溝道功率MOS場效應管) |
| RFP60P03 | 60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs |
| RF1S630SM | 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs |
| RF1S640SM | 18A, 200V, 0.180 Ohm,, N-Channel PowerMOSFET(18A, 200V, 0.180 Ohm,N溝道增強型功率MOS場效應管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RF1S60P03SM9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 60A I(D) | TO-263AB |
| RF1S630 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S630SM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S630SM9A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S640 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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