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參數資料
| 型號： | RF1K49221 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFET⑩ Power MOSFET |
| 中文描述： | 3.5 A, 30 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 文件頁數： | 7/8頁 |
| 文件大?。?/td> | 109K |
| 代理商： | RF1K49221 |
8-142
PSPICE Electrical Model
SUBCKT RF1K49221 2 1 3 ;
rev 4/8/97
CA 12 8 5.60e-10
CB 15 14 5.30e-10
CIN 6 8 3.40e-10
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DESD1 91 9 DESD1MOD
DESD2 91 7 DESD2MOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 67.29
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 1.12e-9
LSOURCE 3 7 4.50e-10
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 28.58e-3
RGATE 9 20 15.34
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RLDRAIN 2 5 10
RLGATE 1 9 11.2
RLSOURCE 3 7 4.5
RSOURCE 8 7 RSOURCEMOD 28.85e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*30),2.5))}
.MODEL DBODYMOD D (IS = 1.95e-13 RS = 2.58e-2 TRS1 = 2.00e-3 TRS2 =-4.39e-7 CJO = 5.15e-10 TT = 5.23e-8 M=0.5)
.MODEL DBREAKMOD D (RS = 6.24e-1 TRS1 =-3.03e-4 TRS2 = 4.27e-6
.MODEL DESD1MOD D (BV=32.3 TBV1=0 TBV2=0 RS=0 TRS1=0 TRS2=0
.MODEL DESD2MOD D (BV=32.5 TBV1=0 TBV2=0 RS=25 TRS1=5.18e-4 TRS2=-1.52e-6)
.MODEL DPLCAPMOD D (CJO = 1.80e-10 IS = 1e-30 N = 10 M=0.5)
.MODEL MMEDMOD NMOS (VTO=2.755 KP=0.21 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=15.34)
.MODEL MSTROMOD NMOS (VTO=3.165 KP=3.75 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL MWEAKMOD NMOS (VTO=2.520 KP=0.040 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=153.4 RS=0.1)
.MODEL RBREAKMOD RES (TC1 = 1.10e-3 TC2 = -1.09e-6)
.MODEL RDRAINMOD RES (TC1 = 1.15e-2 TC2 = 4.09e-5
.MODEL RSLCMOD RES (TC1=3.03e-3 TC2=4.52e-6)
.MODEL RSOURCEMOD RES (TC1=0 TC2=0)
.MODEL RVTHRESMOD RES (TC=-7.20e-4 TC2=-7.11e-6)
.MODEL RVTEMPMOD RES (TC1 = -3.01e-3 TC2 = 1.81e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -7.80 VOFF= -4.80)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.80 VOFF= -7.80)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 1.10 VOFF= 4.10)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 4.10 VOFF= 1.10)
.ENDS
NOTE:For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options
;IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
1
GATE
RGATE
EVTEMP
18
22
20
9
+
12
13
8
14
13
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
RIN
CIN
MWEAK
RDRAIN
16
DBREAK
EBREAK
DBODY
DRAIN
2
RSOURCE
SOURCE
3
RBREAK
RVTEMP
VBAT
IT
EVTHRES
+
19
8
ESG
DPLCAP
ESLC
RSLC1
51
+
RSLC2
6
6
8
10
5
50
5
51
21
11
17
18
8
14
5
8
6
8
7
17
18
19
+
+
+
+
+
22
MMED
MSTRO
RVTHRES
LSOURCE
RLSOURCE
LDRAIN
RLDRAIN
LGATE
RLGATE
91
DESD2
DESD1
8
RF1K49221
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| RF1K49223 | 2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET⑩ Power MOSFET |
| RF1K4922396 | 2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET⑩ Power MOSFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| RF1K4922196 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 60V V(BR)DSS | 2.5A I(D) | SO |
| RF1K49223 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1K4922396 | 功能描述:MOSFET USE 512-FDS9953A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1K4922396R4617 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1K49224 | 制造商:Harris Corporation 功能描述: |
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