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參數(shù)資料
| 型號(hào)： | RF1K49221 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFET⑩ Power MOSFET |
| 中文描述： | 3.5 A, 30 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 109K |
| 代理商： | RF1K49221 |
8-141
Soldering Precautions
The soldering process creates a considerable thermal stress
on any semiconductor component. The melting temperature
of solder is higher than the maximum rated temperature of
the device. The amount of time the device is heated to a high
temperature should be minimized to assure device reliability.
Therefore, the following precautions should always be
observed in order to minimize the thermal stress to which
the devices are subjected.
1. Always preheat the device.
2. Thedeltatemperaturebetweenthepreheatandsoldering
should always be less than 100
o
C. Failure to preheat the
device can result in excessive thermal stress which can
damage the device.
3. Themaximumtemperaturegradientshouldbelessthan5
o
C
per second when changing from preheating to soldering.
4. The peak temperature in the soldering process should be
at least 30
o
C higher than the melting point of the solder
chosen.
5. The maximum soldering temperature and time must not
exceed 260
o
C for 10 seconds on the leads and case of
the device.
6. After soldering is complete, the device should be allowed
to cool naturally for at least three minutes, as forced cool-
ing will increase the temperature gradient and may result
in latent failure due to mechanical stress.
7. During cooling, mechanical stress or shock should be
avoided.
FIGURE 17. SWITCHING TIME TEST CIRCUIT
FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
FIGURE 19. GATE CHARGE TEST CIRCUIT
FIGURE 20. GATE CHARGE WAVEFORMS
Test Circuits and Waveforms
(Continued)
V
GS
0V
R
GS
R
L
DUT
+
-
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
R
L
V
GS
+
-
V
DS
V
DD
DUT
I
G(REF)
V
DD
Q
g(TH)
V
GS
= 2V
Q
g(10)
V
GS
= 10V
Q
g(TOT)
V
GS
= 20V
V
DS
V
GS
I
g(REF)
RF1K49221
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PDF描述 |
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| RF1K49223 | 2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET⑩ Power MOSFET |
| RF1K49223 | 2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET⑩ Power MOSFET |
| RF1K4922396 | 2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET⑩ Power MOSFET |
| RF1K49224 | 3.5A/2.5A, 30V, 0.060/0.150 Ohms, Complementary LittleFET⑩ Power MOSFET |
| RF1S22N10SM | 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RF1K4922196 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 60V V(BR)DSS | 2.5A I(D) | SO |
| RF1K49223 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1K4922396 | 功能描述:MOSFET USE 512-FDS9953A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1K4922396R4617 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1K49224 | 制造商:Harris Corporation 功能描述: |
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