參數(shù)資料
型號(hào)： RF1K49221
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFET⑩ Power MOSFET
中文描述： 3.5 A, 30 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
文件頁(yè)數(shù)： 5/8頁(yè)
文件大?。?/td> 109K
代理商： RF1K49221
8-140
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 14. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT
Test Circuits and Waveforms
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
Typical Performance Curves
(Continued)
1.2
1.1
1.0
0.9
0.8
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= 250
μ
A
500
400
200
0
0
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
15
20
25
C
300
100
C
ISS
C
OSS
C
RSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
= C
DS
+ C
GD
60
45
30
15
0
20
(
)
)
Ig ACT
t, TIME (ms)
80
(
)
)
Ig ACT
10.0
7.5
5.0
2.5
0
V
D
,
V
G
,
V
DD
= BV
DSS
V
DD
= 0.75 BV
DSS
V
DD
= 0.50 BV
DSS
V
DD
= 0.25 BV
DSS
PLATEAU VOLTAGES IN
DESCENDING ORDER:
V
DD
= BV
DSS
V
DD
= BV
DSS
R
L
= 24W
I
g(REF)
= 0.30mA
V
GS
= 10V
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
DUT
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
RF1K49221
相關(guān)PDF資料
PDF描述
RF1K49223 2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET⑩ Power MOSFET
RF1K49223 2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET⑩ Power MOSFET
RF1K4922396 2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET⑩ Power MOSFET
RF1K49224 3.5A/2.5A, 30V, 0.060/0.150 Ohms, Complementary LittleFET⑩ Power MOSFET
RF1S22N10SM 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RF1K4922196 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 60V V(BR)DSS | 2.5A I(D) | SO
RF1K49223 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RF1K4922396 功能描述:MOSFET USE 512-FDS9953A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RF1K4922396R4617 制造商:Rochester Electronics LLC 功能描述:- Bulk
RF1K49224 制造商:Harris Corporation 功能描述:
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