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參數(shù)資料
| 型號： | RF1K49221 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFET⑩ Power MOSFET |
| 中文描述： | 3.5 A, 30 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 109K |
| 代理商： | RF1K49221 |
8-139
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
1
10
100
10
0.1
15
1
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
0
4
8
12
0
1.5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
3.0
4.5
6.0
7.5
16
20
I
D
,
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
A
= 25
C
V
GS
= 4.5V
V
GS
= 5V
V
GS
= 6V
V
GS
= 10V
V
GS
= 20V
V
GS
= 8V
V
GS
= 7V
0
4
6
8
10
2
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
4
8
12
16
20
I
D
,
PULSE TEST
PULSE DURATION = 250
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
150
o
C
-55
o
C
25
o
C
100
200
300
400
500
0
6
4
7
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
D
,
3
8
9
10
PULSE DURATION = 250
μ
s, V
DD
= 15V
DUTY CYCLE = 0.5% MAX
I
D
= 1.25A
I
D
= 2.5A
I
D
= 5.0A
I
D
= 0.625A
O
)
0
-80
0.5
1.0
1.5
2.0
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
PULSE DURATION = 250
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 2.5A
-80
-40
0
40
80
120
160
0.4
0.6
0.8
1.0
1.2
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
T
RF1K49221
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| RF1K4922196 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 60V V(BR)DSS | 2.5A I(D) | SO |
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| RF1K49224 | 制造商:Harris Corporation 功能描述: |
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