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參數資料
| 型號： | RF1K49221 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFET⑩ Power MOSFET |
| 中文描述： | 3.5 A, 30 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 文件頁數： | 2/8頁 |
| 文件大小： | 109K |
| 代理商： | RF1K49221 |
8-137
Absolute Maximum Ratings
T
A
= 25
o
C Unless Otherwise Specified
RF1K49221
60
60
±
20
UNITS
V
V
V
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k
)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (Pulse Width = 5s). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrostatic Discharge Rating MIL-STD-883, Category B(2) . . . . . . . . . . . . . . . . . . . . . ESD
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
2.5
Refer to Peak Current Curve
Refer to UIS Curve
2
0.016
2
-55 to 150
A
W
W/
o
C
kV
o
C
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
A
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= 250
μ
A, V
GS
= 0V, (Figure 12)
V
GS
= V
DS
, I
D
= 250
μ
A, (Figure 11)
V
DS
= 60V,
V
GS
= 0V
60
-
-
V
Gate to Source Threshold Voltage
1
-
3
V
Zero Gate Voltage Drain Current
T
A
= 25
o
C
T
A
= 150
o
C
-
-
1
μ
A
-
-
50
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V, T
A
= 25
o
C
V
GS
=
±
10V, T
A
= 85
o
C
I
D
= 2.5A,
(Figures 9, 10)
-
-
10
μ
A
-
-
25
μ
A
Drain to Source On Resistance
r
DS(ON)
V
GS
= 10V
V
GS
= 4.5V
-
-
0.130
-
-
0.350
Turn-On Time
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
g(10)
Q
g(TH)
C
ISS
C
OSS
C
RSS
R
θ
JA
V
DD
= 30V, I
D
2.5A,
R
L
= 12
, V
GS
= 10V,
R
GS
= 25
,
(Figure 14)
-
-
50
ns
Turn-On Delay Time
-
10
-
ns
Rise Time
-
25
-
ns
Turn-Off Delay Time
-
68
-
ns
Fall Time
-
32
-
ns
Turn-Off Time
-
-
150
ns
Total Gate Charge
V
GS
= 0V to 20V
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 13)
V
DD
= 48V, I
D
2.5A,
R
L
= 19.2
I
g(REF)
= 1.0mA
(Figure 14)
-
24
29
nC
Gate Charge at 10V
-
13
16
nC
Threshold Gate Charge
-
0.8
1.0
nC
Input Capacitance
-
365
-
pF
Output Capacitance
-
140
-
pF
Reverse Transfer Capacitance
-
40
-
pF
Thermal Resistance Junction to Ambient
Pulse Width = 1s
Device mounted on FR-4 material
-
-
62.5
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 2.5A
-
-
1.25
V
Reverse Recovery Time
t
rr
I
SD
= 2.5A, dI
SD
/dt = 100A/
μ
s
-
-
58
ns
RF1K49221
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