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參數(shù)資料
| 型號： | RF1K49211 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 7A, 12V, 0.020 Ohm, Logic Level, Single N-Channel LittleFET⑩ Power MOSFET |
| 中文描述： | 7 A, 12 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 文件頁數(shù)： | 7/7頁 |
| 文件大?。?/td> | 133K |
| 代理商： | RF1K49211 |
8-135
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
PSPICE Electrical Model
SUBCKT RF1K49211 2 1 3 ;
rev 6/26/96
CA 12 8 2.11e-9
CB 15 14 2.99e-9
CIN 6 8 1.30e-9
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 15.81
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 1.04e-9
LSOURCE 3 7 2.37e-10
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 3.50e-3
RGATE 9 20 1.57
RLDRAIN 2 5 10
RLGATE 1 9 10.4
RLSOURCE 3 7 2.37
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 11.42e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*170),3))}
.MODEL DBODYMOD D (IS = 1.36e-12 RS = 1.65e-2 TRS1 = 3.88e-3 TRS2 = -5.45e-6 CJO = 2.95e-9 TT = 2.70e-8 M = 0.43)
.MODEL DBREAKMOD D (RS = 2.75e-3 TRS1 = -5.01e-4 TRS2 = -1.60e-4)
.MODEL DPLCAPMOD D (CJO = 2.40e-9 IS = 1e-30 N = 10 M = 0.55)
.MODEL MMEDMOD NMOS (VTO = 1.62 KP = 1.5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 1.57)
.MODEL MSTROMOD NMOS (VTO = 2.08 KP = 98.0 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 1.402 KP = 0.067 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 15.7 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 8.51e-4 TC2 = 7.88e-7)
.MODEL RDRAINMOD RES (TC1 = 1.55e-2 TC2 = 5.78e-5)
.MODEL RSLCMOD RES (TC1 =1.02e-4 TC2 = 1.07e-6)
.MODEL RSOURCEMOD RES (TC1 = 0 TC2 = 0)
.MODEL RVTHRESMOD RES (TC1 = -2.20e-3 TC2 = -7.29e-6)
.MODEL RVTEMPMOD RES (TC1 = -5.10e-4 TC2 = 8.07e-7)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.1 VOFF = -1.1)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.1 VOFF = -4.1)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.5 VOFF = 2.5)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 2.5 VOFF = -0.5)
.ENDS
NOTE: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options
; IEEE Power Electronics Specialist Conference Records, 1991.
18
22
+
-
6
8
+
-
5
51
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
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RBREAK
RVTEMP
VBAT
RVTHRES
IT
17
18
19
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
6
RF1K49211
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RF1K4921196 | TRANSISTOR | MOSFET | N-CHANNEL | 12V V(BR)DSS | 7A I(D) | SO |
| RF1K49221 | 2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFET⑩ Power MOSFET |
| RF1K49223 | 2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET⑩ Power MOSFET |
| RF1K49223 | 2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET⑩ Power MOSFET |
| RF1K4922396 | 2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET⑩ Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RF1K4921196 | 功能描述:MOSFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1K49221 | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1K4922196 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 60V V(BR)DSS | 2.5A I(D) | SO |
| RF1K49223 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1K4922396 | 功能描述:MOSFET USE 512-FDS9953A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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