參數(shù)資料
型號： RF1K49211
廠商： INTERSIL CORP
元件分類： JFETs
英文描述： 7A, 12V, 0.020 Ohm, Logic Level, Single N-Channel LittleFET⑩ Power MOSFET
中文描述： 7 A, 12 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
文件頁數(shù)： 5/7頁
文件大?。?/td> 133K
代理商： RF1K49211
8-133
FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 13. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 14. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 15. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 17. UNCLAMPED ENERGY WAVEFORMS
Typical Performance Curves
(Continued)
-80
-40
0
40
80
120
160
0.6
0.8
1.0
1.2
N
T
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
1.2
1.1
1.0
0.9
0.8
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= 250
μ
A
3500
3000
1000
00
2
4
6
8
10
C
2500
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
C
OSS
C
RSS
2000
500
1500
12
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
= C
DS
+ C
GD
12
9
6
3
0
20
)
)
---------------------
t, TIME (
μ
s)
80
)
)
---------------------
5.00
3.75
2.50
1.25
0
R
L
= 1.71
I
G(REF)
= 0.75mA
V
GS
= 5V
PLATEAU VOLTAGES IN
DESCENDING ORDER:
V
D
,
V
G
,
V
DD
= BV
DSS
V
DD
= 0.75 BV
DSS
V
DD
= 0.50 BV
DSS
V
DD
= 0.25 BV
DSS
V
DD
= BV
DSS
V
DD
= BV
DSS
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
RF1K49211
相關(guān)PDF資料
PDF描述
RF1K49211 7A, 12V, 0.020 Ohm, Logic Level, Single N-Channel LittleFET⑩ Power MOSFET
RF1K4921196 TRANSISTOR | MOSFET | N-CHANNEL | 12V V(BR)DSS | 7A I(D) | SO
RF1K49221 2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFET⑩ Power MOSFET
RF1K49223 2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET⑩ Power MOSFET
RF1K49223 2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET⑩ Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RF1K4921196 功能描述:MOSFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RF1K49221 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RF1K4922196 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 60V V(BR)DSS | 2.5A I(D) | SO
RF1K49223 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RF1K4922396 功能描述:MOSFET USE 512-FDS9953A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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