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參數(shù)資料
| 型號： | RF1K49211 |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 7A, 12V, 0.020 Ohm, Logic Level, Single N-Channel LittleFET⑩ Power MOSFET |
| 中文描述： | 7 A, 12 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 文件頁數(shù)： | 4/7頁 |
| 文件大小： | 133K |
| 代理商： | RF1K49211 |
8-132
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. SWITCHING TIME vs GATE TO SOURCE
RESISTANCE
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
1
10
100
10
0.1
50
1
0.01
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
0
10
20
30
0
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
3
4
5
V
GS
= 3V
40
50
V
GS
= 4V
I
D
,
V
GS
= 10V
V
GS
= 5V
V
GS
= 2.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
A
= 25
C
0
2
3
4
5
1
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
10
20
30
40
50
150
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 10V
I
D
,
-55
o
C
25
o
C
50
100
150
200
0
3.5
2.5
4
3
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
D
,
)
2
4.5
5
I
D
= 3.5A
I
D
= 1.75A
I
D
= 7.0A
I
D
= 15A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 10V
V
DD
= 6V, I
D
= 7A, R
L
= 0.86
0
100
200
250
0
10
R
GS
, GATE TO SOURCE RESISTANCE (
)
20
30
40
50
300
350
S
t
f
t
r
t
d(OFF)
t
d(ON)
150
50
0.0
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 5V, I
D
= 7A
RF1K49211
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