參數(shù)資料
型號(hào)： RF1K49157
廠商： INTERSIL CORP
元件分類： JFETs
英文描述： 6.3A, 30V, 0.030 Ohm, Single N-Channel LittleFET⑩ Power MOSFET
中文描述： 6.3 A, 30 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
封裝： MS-012AA, 8 PIN
文件頁(yè)數(shù)： 7/8頁(yè)
文件大?。?/td> 149K
代理商： RF1K49157
8-128
PSPICE Electrical Model
SUBCKT RF1K49157 2 1 3 ;
rev 3/14/95
CA 12 8 1.834e-9
CB 15 14 1.72e-9
CIN 6 8 1.416e-9
DBODY 7 5 DBDMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 34.89
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRESH 6 21 19 8 1
EZTEMPCO 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1.0e-9
LGATE 1 9 1.04e-9
LSOURCE 3 7 0.237e-9
MOS1 16 6 8 8 MSTRONG M = 0.99
MOS2 16 21 8 8 MWEAK M = 0.01
RBREAK 17 18 RBREAKMOD 1
RDRAIN 5 16 RDRAINMOD 4.39e-3
RGATE 9 20 1.53
RIN 6 8 1e9
RLDRAIN 2 5 1.0
RLGATE 1 9 10.4
RLSOURCE 3 7 0.237
RSOURCE 8 7 RSOURCEMOD 4.44e-3
RTHRESH 22 8 RTHRESMOD 1
RZTEMPCO 18 19 RZTEMPCOMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
.MODEL DBDMOD D (IS = 1.14e-12 RS = 6.01e-3 TRS1 = 1.05e-4 TRS2 = -2.46e-5 CJO = 2.62e-9 TT = 2.44e-8)
.MODEL DBREAKMOD D (RS = 4.89e-1 TRS1 = 2.11e-3 TRS2 = -3.19e-6)
.MODEL DPLCAPMOD D (CJO = 1.007e-9 IS = 1e-30 N = 10)
.MODEL MSTRONG NMOS (VTO = 2.567 KP = 33.21 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAK NMOS (VTO=2.0225 KP = 33.21 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL RBREAKMOD RES (TC1 = 9.59e-4 TC2 = -2.87e-7)
.MODEL RDRAINMOD RES (TC1 = 8.08e-3 TC2 = 1.6e-5)
.MODEL RSOURCEMOD RES (TC1=0 TC2=0)
.MODEL RTHRESHMOD RES (TC1=-6.4e-4 TC2=-8.1e-6)
.MODEL RZTEMPCOMOD RES (TC1 = -2.43e-3 TC2 = 1.57e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -6.47 VOFF= -4.47)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.47 VOFF= -6.47)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3.3 VOFF= 1.7)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 1.7 VOFF= -3.3)
.ENDS
NOTE: For further discussion of the PSPICE model, consult
A New PSPICE Sub-circuit for the Power MOSFET Featuring Global
Temperature Options;
IEEE Power Electronics Specialist Conference Records, 1991.
1
GATE
LGATE
RGATE
EZTEMPCO
+
20
18
12
13
8
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
RIN
CIN
MOS1
MOS2
RDRAIN
DBREAK
EBREAK
DBODY
LDRAIN
DRAIN
2
RSOURCE
LSOURCE
SOURCE
3
RBREAK
RZTEMPCO
VBAT
+
IT
EVTHRESH
+
19
ESG
DPLCAP
6
10
5
16
21
11
8
14
7
17
18
+
+
+
+
9
RLGATE
RLSOURCE
RLDRAIN
19
-
22
RVTHRESH
14
13
-
6
8
8
-
-
-
22
5
8
-
-
6
8
17
18
RF1K49157
相關(guān)PDF資料
PDF描述
RF1K49157 6.3A, 30V, Avalanche Rated, Single N-Channel LittleFET⑩ Enhancement Mode Power MOSFET
RF1K49211 7A, 12V, 0.020 Ohm, Logic Level, Single N-Channel LittleFET⑩ Power MOSFET
RF1K49211 7A, 12V, 0.020 Ohm, Logic Level, Single N-Channel LittleFET⑩ Power MOSFET
RF1K4921196 TRANSISTOR | MOSFET | N-CHANNEL | 12V V(BR)DSS | 7A I(D) | SO
RF1K49221 2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFET⑩ Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RF1K4915796 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RF1K49211 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RF1K4921196 功能描述:MOSFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RF1K49221 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RF1K4922196 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 60V V(BR)DSS | 2.5A I(D) | SO
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