參數(shù)資料
型號： RF1K49156
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 874271042
中文描述： 6.3 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
文件頁數(shù)： 4/8頁
文件大小： 142K
代理商： RF1K49156
8-118
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. SWITCHING TIME vs GATE TO SOURCE
RESISTANCE
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
1
10
100
10
0.1
50
1
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
0
10
20
30
0
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
3
4
5
V
GS
= 2.5V
40
50
V
GS
= 3V
I
D
,
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 5V
V
GS
= 10V
V
GS
= 4V
T
A
= 25
C
0
3.0
4.5
6.0
7.5
1.5
0
10
20
30
40
50
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
-55
o
C
25
o
C
150
o
C
50
100
150
200
250
0
2.5
3.5
4.0
4.5
5.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
D
,
)
I
D
= 6.3A
I
D
= 3.5A
I
D
= 1.75A
I
D
= 15A
3.0
2.0
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
100
20
30
40
50
0
300
250
200
150
50
0
10
RGS, GATE TO SOURCE RESISTANCE (
)
S
V
DD
= 15V, I
D
= 6.3A, R
L
= 2.38
t
r
t
D(ON)
t
D(OFF)
t
f
0
0.5
1.0
1.5
2.0
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 5V, I
D
= 6.3A
RF1K49156
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