參數(shù)資料
型號(hào)： RF1K49092
廠商： INTERSIL CORP
元件分類： JFETs
英文描述： Logic Level Complementary power MOSFET(邏輯電平可補(bǔ)償功率MOS場效應(yīng)管)
中文描述： 3.5 A, 12 V, 0.05 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA
文件頁數(shù)： 9/13頁
文件大?。?/td> 248K
代理商： RF1K49092
9-11
FIGURE 31. SWITCHING TIME AS A FUNCTION OF GATE
RESISTANCE
FIGURE 32. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 33. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 34. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 35. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 36. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Typical Performance Curves (P-Channel)
(Continued)
40
20
30
40
50
0
120
100
80
60
20
0
10
R
GS
, GATE TO SOURCE RESISTANCE (
)
S
t
D(ON)
t
D(OFF)
t
f
t
r
V
DD
= -6V, I
D
= -2.5A, R
L
= 2.40
0
-80
0.5
1.0
1.5
2.0
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= -5V, I
D
= -2.5A
-80
-40
0
40
80
120
160
0.0
0.5
1.0
1.5
2.0
N
T
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= -250
μ
A
2.0
1.5
1.0
0.5
0.080
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= -250
μ
A
1200
900
300
0
0
-2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-4
-6
-8
-10
C
600
C
ISS
C
OSS
C
RSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
= C
DS
+ C
GD
-12
-9
-6
-3
0
20
)
)
---------------------
t, TIME (
μ
s)
80
)
)
---------------------
-5.00
-3.75
-2.50
-1.25
0.00
V
DD
= BV
DSS
V
DD
= BV
DSS
V
D
,
V
G
,
R
L
= 3.84
I
G(REF)
= -0.5mA
V
GS
= -5V
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
RF1K49092
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