參數資料
型號： RF1K49092
廠商： INTERSIL CORP
元件分類： JFETs
英文描述： Logic Level Complementary power MOSFET(邏輯電平可補償功率MOS場效應管)
中文描述： 3.5 A, 12 V, 0.05 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA
文件頁數： 5/13頁
文件大?。?/td> 248K
代理商： RF1K49092
9-7
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. SWITCHING TIME vs GATE RESISTANCE
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 13. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves (N-Channel)
(Continued)
25
o
C
0.0
3.0
4.5
6.0
7.5
1.5
0
5
10
15
20
25
150
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 6V
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
-55
o
C
50
100
150
200
250
0
2.5
3.5
4.0
4.5
5.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
D
,
)
I
D
= 1.75A
I
D
= 3.5A
I
D
= 0.5A
I
D
= 7.0A
3.0
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 10V
40
20
30
40
50
0
120
100
80
60
20
0
10
R
GS
, GATE TO SOURCE RESISTANCE (
)
S
140
t
r
t
D(OFF)
t
D(ON)
t
f
V
DD
= 6V, I
D
= 3.5A, R
L
= 1.71
0.0
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 5V, I
D
= 3.5A
-80
-40
0
40
80
120
160
0.0
0.5
1.0
1.5
2.0
N
T
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= 250
μ
A
RF1K49092
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