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參數(shù)資料
| 型號： | RF1K49092 |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | Logic Level Complementary power MOSFET(邏輯電平可補償功率MOS場效應管) |
| 中文描述： | 3.5 A, 12 V, 0.05 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 文件頁數(shù)： | 4/13頁 |
| 文件大小： | 248K |
| 代理商： | RF1K49092 |
9-6
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
Typical Performance Curves (N-Channel)
(Continued)
t, RECTANGULAR PULSE DURATION (s)
10
-3
10
-1
10
0
10
1
10
2
0.01
10
0.1
1
10
-2
10
3
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JA
x R
θ
JA
+ T
A
P
DM
t
1
t
2
Z
θ
J
,
T
SINGLE PULSE
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
10
100
0.01
1
100
10
0.1
0.1
I
D
,
DC
5ms
10ms
100ms
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
1s
T
J
= MAX RATED
T
A
= 25
o
C
V
DSS
MAX = 12V
t, PULSE WIDTH (s)
200
10
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
V
GS
= 5V
100
I
D
,
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
I
=
I
25
150 - T
A
125
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
T
A
= 25
o
C
1
10
100
10
0.1
20
1
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
0
5
10
15
0
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
3
4
5
V
GS
= 3V
20
25
V
GS
= 4V
I
D
,
V
GS
= 5V
V
GS
= 4.5V
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
A
= 25
C
RF1K49092
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