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參數(shù)資料
| 型號(hào)： | RF1K49092 |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | Logic Level Complementary power MOSFET(邏輯電平可補(bǔ)償功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 3.5 A, 12 V, 0.05 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 文件頁(yè)數(shù)： | 11/13頁(yè) |
| 文件大?。?/td> | 248K |
| 代理商： | RF1K49092 |
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9-13
Soldering Precautions
1. The soldering process creates a considerable thermal
stress on any semiconductor component. The melting
temperature of solder is higher than the maximum rated
temperature of the device. The amount of time the device
is heated to a high temperature should be minimized to
assure device reliability. Therefore, the following precau-
tions should always be observed in order to minimize the
thermal stress to which the devices are subjected.
2. Always preheat the device.
3. Thedeltatemperaturebetweenthepreheatandsoldering
should always be less than 100
o
C. Failure to preheat the
device can result in excessive thermal stress which can
damage the device.
4. Themaximumtemperaturegradientshouldbelessthan5
o
C
per second when changing from preheating to soldering.
5. The peak temperature in the soldering process should be
at least 30
o
C higher than the melting point of the solder
chosen.
6. The maximum soldering temperature and time must not
exceed 260
o
C for 10 seconds on the leads and case of
the device.
7. After soldering is complete, the device should be allowed
to cool naturally for at least three minutes, as forced cool-
ing will increase the temperature gradient and may result
in latent failure due to mechanical stress.
8. During cooling, mechanical stress or shock should be
avoided.
RF1K49092
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| RF1K49093 | 2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET⑩ Power MOSFET |
| RF1K49154 | 2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET⑩ Power MOSFET |
| RF1K49154 | 2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET⑩ Power MOSFET |
| RF1K4915496 | TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 60V V(BR)DSS | 2A I(D) | SO |
| RF1K49156 | 6.3A, 30V, 0.030 Ohm, Logic Level, Single N-Channel LittleFET Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RF1K4909296 | 功能描述:MOSFET USE 512-FDS9934C RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1K49093 | 功能描述:MOSFET SOIC-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1K4909396 | 功能描述:MOSFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1K49154 | 功能描述:MOSFET USE 512-FDS9945 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1K4915496 | 功能描述:MOSFET USE 512-FDS9945 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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