參數(shù)資料
型號(hào)： RF1K49092
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET⑩ Power MOSFET
中文描述： 3.5 A, 12 V, 0.05 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA
文件頁(yè)數(shù)： 8/14頁(yè)
文件大小： 459K
代理商： RF1K49092
2002 Fairchild Semiconductor Corporation
RF1K49092 Rev. B
FIGURE 25. FORWARD BIAS SAFE OPERATING AREA
FIGURE 26. PEAK CURRENT CAPABILITY
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 27. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 28. SATURATION CHARACTERISTICS
FIGURE 29. TRANSFER CHARACTERISTICS
FIGURE 30. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
Typical Performance Curves (P-Channel)
(Continued)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-1
-10
-100
-0.01
-1
-100
-10
-0.1
-0.1
I
D
,
DC
5ms
10ms
100ms
1s
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
T
J
= MAX RATED, T
A
= 25
o
C, V
DSS(MAX)
= -12V
t, PULSE WIDTH (s)
-200
-10
-1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
V
GS
= -5V
-100
I
D
,
V
GS
= -10V
I
=
I
25
150 - T
A
125
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
T
A
= 25
o
C
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
1
10
100
-10
0.1
-20
-1
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
0
-5
-10
-15
0
-1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-2
-3
-4
-5
-20
-25
V
GS
= -4V
I
D
,
V
GS
= -10V
V
GS
= -5V
V
GS
= -3V
V
GS
= -4.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
A
= 25
C
25
o
C
0.0
-3.0
-4.5
-6.0
-7.5
-1.5
0
-5
-10
-15
-20
-25
150
o
C
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
-55
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= -6V
100
200
300
400
500
0
-2.5
-3.5
-4.0
-4.5
-5.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
D
,
)
I
D
= -2.5A
-3.0
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
I
D
= -0.5A
I
D
= -6.0A
I
D
= -1.5A
V
DD
= -10V
RF1K49092
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