參數(shù)資料
型號(hào)： RF1K49092
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET⑩ Power MOSFET
中文描述： 3.5 A, 12 V, 0.05 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA
文件頁(yè)數(shù)： 5/14頁(yè)
文件大?。?/td> 459K
代理商： RF1K49092
2002 Fairchild Semiconductor Corporation
RF1K49092 Rev. B
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. SWITCHING TIME vs GATE RESISTANCE
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 13. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves (N-Channel)
(Continued)
25
o
C
0.0
3.0
4.5
6.0
7.5
1.5
0
5
10
15
20
25
150
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 6V
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
-55
o
C
50
100
150
200
250
0
2.5
3.5
4.0
4.5
5.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
D
,
)
I
D
= 1.75A
I
D
= 3.5A
I
D
= 0.5A
I
D
= 7.0A
3.0
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 10V
40
20
30
40
50
0
120
100
80
60
20
0
10
R
GS
, GATE TO SOURCE RESISTANCE (
)
S
140
t
r
t
D(OFF)
t
D(ON)
t
f
V
DD
= 6V, I
D
= 3.5A, R
L
= 1.71
0.0
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 5V, I
D
= 3.5A
-80
-40
0
40
80
120
160
0.0
0.5
1.0
1.5
2.0
N
T
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= 250
μ
A
RF1K49092
相關(guān)PDF資料
PDF描述
RF1K49092 Logic Level Complementary power MOSFET(邏輯電平可補(bǔ)償功率MOS場(chǎng)效應(yīng)管)
RF1K49093 2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET⑩ Power MOSFET
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RF1K49154 2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET⑩ Power MOSFET
RF1K4915496 TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 60V V(BR)DSS | 2A I(D) | SO
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RF1K49093 功能描述:MOSFET SOIC-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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RF1K49154 功能描述:MOSFET USE 512-FDS9945 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RF1K4915496 功能描述:MOSFET USE 512-FDS9945 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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