參數(shù)資料
型號(hào)： RF1K49092
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET⑩ Power MOSFET
中文描述： 3.5 A, 12 V, 0.05 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA
文件頁(yè)數(shù)： 12/14頁(yè)
文件大?。?/td> 459K
代理商： RF1K49092
2002 Fairchild Semiconductor Corporation
RF1K49092 Rev. B
PSPICE Electrical Model
SUBCKT RF1K49092 2 1 3;
N-Channel Model rev 9/6/94
CA 12 8 9.77e-10
CB 15 14 9.19e-10
CIN 6 8 7.81e-10
DBODY 7 5 DBDMOD
DBREAK 5 11 DBKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 14.89
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTO 20 6 18 8 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 1.233e-9
LSOURCE 3 7 0.452e-9
MOS1 16 6 8 8 MOSMOD M = 0.99
MOS2 16 21 8 8 MOSMOD M = 0.01
RBREAK 17 18 RBKMOD 1
RDRAIN 5 16 RDSMOD 4.91e-3
RGATE 9 20 2.74
RIN 6 8 1e9
RSOURCE 8 7 RDSMOD 5e-3
RVTO 18 19 RVTOMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 0.3215
.MODEL DBDMOD D (IS = 7.00e-13 RS = 2.15e-2 TRS1 = 0.5e-3 TRS2 = 3.68e-6 CJO = 1.28e-9 TT = 1.8e-8)
.MODEL DBKMOD D (RS = 1.28e-1 TRS1 = 1.69e-3 TRS2 = -2.0e-6)
.MODEL DPLCAPMOD D (CJO = 0.84e-9 IS = 1e-30 N = 10)
.MODEL MOSMOD NMOS (VTO = 1.6 3KP = 11.5 5IS = 1e-3 0N = 1 0TOX = 1L = 1 uW = 1u)
.MODEL RBKMOD RES (TC1 = 9.15e- 4TC2 = 3.13e-7)
.MODEL RDSMOD RES (TC1 = 7.00e-4 TC2 = 5.00e-6)
.MODEL RVTOMOD RES (TC1 = -2.155e- 3TC2 = -2.7e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -6.05 VOFF= -4.05)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.05 VOFF= -6.05)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.72 VOFF= 4.28)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 4.28 VOFF= -0.72)
.ENDS
NOTE: For further discussion of the PSPICE model, consult
A New PSPICE Sub-circuit for the Power MOSFET Featuring Global
Temperature Options
; IEEE Power Electronics Specialist Conference Records, 1991.
1
GATE
LGATE RGATE
EVTO
18
8
+
12
13
8
14
13
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
RIN
CIN
MOS1
MOS2
RDRAIN
DBREAK
EBREAK
DBODY
LDRAIN
DRAIN
2
RSOURCE
LSOURCE
SOURCE
RBREAK
RVTO
VBAT
+
IT
VTO
ESG
DPLCAP
6
6
8
10
5
16
21
11
17
18
8
14
5
8
6
8
7
3
17
18
19
+
+
+
+
+
20
9
RF1K49092
相關(guān)PDF資料
PDF描述
RF1K49092 Logic Level Complementary power MOSFET(邏輯電平可補(bǔ)償功率MOS場(chǎng)效應(yīng)管)
RF1K49093 2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET⑩ Power MOSFET
RF1K49154 2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET⑩ Power MOSFET
RF1K49154 2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET⑩ Power MOSFET
RF1K4915496 TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 60V V(BR)DSS | 2A I(D) | SO
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RF1K49093 功能描述:MOSFET SOIC-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RF1K4909396 功能描述:MOSFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RF1K49154 功能描述:MOSFET USE 512-FDS9945 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RF1K4915496 功能描述:MOSFET USE 512-FDS9945 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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