參數(shù)資料
型號: RF1K49092
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET⑩ Power MOSFET
中文描述: 3.5 A, 12 V, 0.05 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA
文件頁數(shù): 10/14頁
文件大?。?/td> 459K
代理商: RF1K49092
2002 Fairchild Semiconductor Corporation
RF1K49092 Rev. B
Test Circuits and Waveforms (P-Channel)
FIGURE 37. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 38. UNCLAMPED ENERGY WAVEFORMS
FIGURE 39. SWITCHING TIME TEST CIRCUIT
FIGURE 40. RESISTIVE SWITCHING WAVEFORMS
FIGURE 41. GATE CHARGE TEST CIRCUIT
FIGURE 42. GATE CHARGE WAVEFORMS
t
P
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
GS
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
V
GS
R
L
R
G
DUT
+
-
V
DD
t
d(ON)
t
r
90%
10%
V
DS
90%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
t
ON
10%
0
0.3
μ
F
12V
BATTERY
50k
+V
DS
S
DUT
D
G
I
g(REF)
0
(ISOLATED
SUPPLY)
-V
DS
0.2
μ
F
CURRENT
REGULATOR
I
D
CURRENT
SAMPLING
RESISTOR
I
G
CURRENT
SAMPLING
RESISTOR
DUT
V
DD
Q
g(TH)
V
GS
= -1V
Q
g(-5)
V
GS
= -5V
Q
g(TOT)
V
GS
= -10V
V
DS
-V
GS
I
g(REF)
0
0
RF1K49092
相關(guān)PDF資料
PDF描述
RF1K49092 Logic Level Complementary power MOSFET(邏輯電平可補償功率MOS場效應(yīng)管)
RF1K49093 2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET⑩ Power MOSFET
RF1K49154 2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET⑩ Power MOSFET
RF1K49154 2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET⑩ Power MOSFET
RF1K4915496 TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 60V V(BR)DSS | 2A I(D) | SO
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RF1K4909296 功能描述:MOSFET USE 512-FDS9934C RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RF1K49093 功能描述:MOSFET SOIC-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RF1K4909396 功能描述:MOSFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RF1K49154 功能描述:MOSFET USE 512-FDS9945 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RF1K4915496 功能描述:MOSFET USE 512-FDS9945 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube