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參數(shù)資料
| 型號： | REF19XGRU4 |
| 廠商： | Analog Devices, Inc. |
| 英文描述： | Precision Micropower, Low Dropout Voltage References |
| 中文描述： | 精密微功耗，低壓差電壓基準 |
| 文件頁數(shù)： | 7/24頁 |
| 文件大?。?/td> | 364K |
| 代理商： | REF19XGRU4 |
REV. E
REF19x Series
–7–
(@ V
S
= 5.0 V, T
A
= –40 C
≤
T
A
≤
+85 C, unless otherwise noted.)
(@ V
S
= 5.0 V, T
A
= 25 C, unless otherwise noted.)
REF194–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
Parameter
INITIAL ACCURACY
1
E Grade
F Grade
G Grade
LINE REGULATION
2
E Grade
F and G Grades
LOAD REGULATION
2
E Grade
F and G Grades
Symbol
Condition
Min
Typ
Max
Unit
V
O
I
OUT
= 0 mA
4.498
4.495
4.490
4.5
4.502
4.505
4.510
V
V
V
V
O
/ V
IN
4.75 V
≤
V
S
≤
15 V, I
OUT
= 0 mA
2
4
4
8
ppm/V
ppm/V
V
O
/ V
LOAD
V
S
= 5.8 V, 0 mA
≤
I
OUT
≤
30 mA
2
4
4
8
ppm/mA
ppm/mA
DROPOUT VOLTAGE
V
S
–
V
O
V
S
= 5.00 V, I
LOAD
= 10 mA
V
S
= 5.8 V, I
LOAD
= 30 mA
1000 Hours @ 125
°
C
0.50
1.30
V
V
LONG-TERM STABILITY
3
DV
O
e
N
2
mV
μ
V p-p
NOISE VOLTAGE
0.1 Hz to 10 Hz
45
NOTES
1
Initial accuracy includes temperature hysteresis effect.
2
Line and load regulation specifications include the effect of self-heating.
3
Long-term drift is guaranteed by 1000 hours life test performed on three independent wafer lots at 125
°
C, with an LTPD of 1.3.
Specifications subject to change without notice.
ELECTRICAL CHARACTERISTICS
Parameter
TEMPERATURE COEFFICIENT
1, 2
E Grade
F Grade
G Grade
3
LINE REGULATION
4
E Grade
F and G Grades
LOAD REGULATION
4
E Grade
F and G Grades
Symbol
Condition
Min
Typ
Max
Unit
TCV
O
/
°
C
I
OUT
= 0 mA
2
5
10
5
10
25
ppm/
°
C
ppm/
°
C
ppm/
°
C
V
O
/ V
IN
4.75 V
≤
V
S
≤
15 V, I
OUT
= 0 mA
5
10
10
20
ppm/V
ppm/V
V
O
/ V
LOAD
V
S
= 5.80 V, 0 mA
≤
I
OUT
≤
25 mA
5
10
15
20
ppm/mA
ppm/mA
DROPOUT VOLTAGE
V
S
–
V
O
V
S
= 5.00 V, I
LOAD
= 10 mA
V
S
= 5.80 V, I
LOAD
= 25 mA
0.5
1.30
V
V
SLEEP
PIN
Logic High Input Voltage
Logic High Input Current
Logic Low Input Voltage
Logic Low Input Current
V
H
I
H
V
L
I
L
2.4
V
μ
A
V
μ
A
μ
A
μ
A
–
8
0.8
–
8
SUPPLY CURRENT
Sleep Mode
No Load
No Load
45
15
NOTES
1
For proper operation, a 1
μ
F capacitor is required between the output pin and the GND pin of the device.
2
TCV
O
is defined as the ratio of output change with temperature variation to the specified temperature range expressed in ppm/
°
C.
TCV
O
= (
V
MAX
– V
MIN
)/ V
O
(
T
MAX
– T
MIN
).
3
Guaranteed by characterization.
4
Line and load regulation specifications include the effect of self-heating.
Specifications subject to change without notice.
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