參數(shù)資料
型號(hào): UPA1560
廠商: NEC Corp.
英文描述: N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE
中文描述: N溝道功率場(chǎng)效應(yīng)晶體管陣列切換工業(yè)用途
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 38K
代理商: UPA1560
Data Sheet G14283EJ1V0DS00
2
μ
PA1560
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10 V, I
D
= 1.5 A
130
165
m
R
DS(on)2
V
GS
= 4.0 V, I
D
= 1.5 A
145
200
m
Gate to Source Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1.0 mA
1.0
1.8
2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 1.5 A
2
4.5
S
Drain Leakage Current
I
DSS
V
DS
= 120 V, V
GS
= 0 V
10
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
= ±20 V, V
DS
= 0 V
±10
μ
A
Input Capacitance
C
iss
V
DS
= 10 V
600
pF
Output Capacitance
C
oss
V
GS
= 0 V
160
pF
Reverse Transfer Capacitance
C
rss
f = 1.0 MHz
70
pF
Turn-on Delay Time
t
d(on)
I
D
= 1.5 A
35
ns
Rise Time
t
r
V
GS(on)
= 10 V
80
ns
Turn-off Delay Time
t
d(off)
V
DD
= 60 V
700
ns
Fall Time
t
f
R
L
= 30
250
ns
Total Gate Charge
Q
G
I
D
= 3.0 A
28
nC
Gate to Source Charge
Q
GS
V
DD
= 96 V
2.5
nC
Gate to Drain Charge
Q
GD
V
GS
= 10 V
9
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 3.0 A, V
GS
= 0 V
0.9
V
Reverse Recovery Time
t
rr
160
ns
Reverse Recovery Charge
Q
rr
I
F
= 3.0 A, V
GS
= 0 V
di/dt = 50 A/
μ
s
280
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
50
PG
L
V
DD
V
GS
= 20
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
90 %
V
GS(on)
90 %
t
d(off)
t
f
10 %
I
D
t
off
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
0
V
GS
D.U.T.
R
L
V
DD
τ
= 1 s
Duty Cycle
1 %
GS
Wave Form
D
Wave Form
V
GS
10 %
10 %
0
I
D
90 %
t
d(on)
t
r
τ
R
G
= 10
0
t
on
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