參數(shù)資料
型號: Q67060-S6952A3
廠商: INFINEON TECHNOLOGIES AG
英文描述: Smart Highside High Current Power Switch
中文描述: 智能阻抗高側(cè)大電流電源開關(guān)
文件頁數(shù): 7/15頁
文件大小: 279K
代理商: Q67060-S6952A3
Data Sheet BTS550P
Infineon Technologies AG
7
2003-Oct-01
Truth Table
Input
current
level
L
H
Output
Current
Sense
IIS
0
nominal
Remark
level
Normal
operation
Very high
load current
Current-
limitation
Short circuit to
GND
Over-
temperature
Short circuit to
V
bb
Open load
L
H
=I
L
/ k
ilis
, up to I
IS
=I
IS,lim
up to V
ON
=V
ON(Fold back)
I
IS
no longer proportional to I
L
V
ON
> V
ON(Fold back)
if V
ON
>V
ON(SC)
, shutdown will occure
H
H
I
IS, lim
H
H
0
L
H
L
H
L
H
L
H
L
L
L
L
L
H
H
0
0
0
0
0
<nominal
22)
0
0
0
Z
23)
H
L
Negative output
voltage clamp
Inverse load
current
L
H
H
H
0
0
L = "Low" Level
H = "High" Level
Options Overview
Type
BTS
6510P
550P
650P
555
Overtemperature protection with hysteresis
T
j >150 °C, latch function
24
)
T
j >150 °C, with auto-restart on cooling
Short circuit to GND protection
with overtemperature shutdown
switches off when
V
ON
>6 V typ.
(when first turned on after approx. 180
μ
s)
Overvoltage shutdown
Output negative voltage transient limit
to
V
bb
- V
ON(CL)
to
V
OUT
= -19 V typ
Overtemperature reset by cooling: Tj < Tjt (see diagram on page 14)
Short circuit to GND: Shutdown remains latched until next reset via input (see diagram on page 13)
X
X
X
X
X
X
X
X
X
-
-
-
X
X
X
X
25)
X
25
)
X
25)
22
) Low ohmic short to
V
bb
may reduce the output current
I
L
and can thus be detected via the sense current
I
IS
.
23
) Power Transistor "OFF", potential defined by external impedance.
24
) Latch except when
V
bb
-
V
OUT
<
V
ON(SC)
after shutdown. In most cases
V
OUT
= 0 V after shutdown (
V
OUT
0 V only if forced externally). So the device remains latched unless
V
bb
<
V
ON(SC)
(see page 5). No latch
between turn on and t
d(SC)
.
25
) Can be "switched off" by using a diode D
S
(see page 8) or leaving open the current sense output.
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