參數(shù)資料
型號： PVB42004X
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： NPN microwave power transistor
中文描述： C BAND, Si, NPN, RF POWER TRANSISTOR
封裝： SOT-445A, 2 PIN
文件頁數(shù)： 4/8頁
文件大?。?/td> 64K
代理商： PVB42004X
1997 Feb 19
4
Philips Semiconductors
Product specification
NPN microwave power transistor
PVB42004X
THERMAL CHARACTERISTICS
Note
1.
See “Mounting recommendations in the General part of handbook SC15”
CHARACTERISTICS
T
mb
= 25
°
C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
T
j
= 75
°
C
T
j
= 75
°
C; note 1
MAX.
UNIT
R
th j-mb
R
th mb-h
thermal resistance from junction to mounting base
thermal resistance from mounting-base to heatsink
6.5
0.7
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)CES
collector-emitter breakdown
voltage
collector cut-off current
emitter cut-off current
collector-base capacitance
I
C
= 30 mA; R
BE
= 0
40
V
I
CBO
I
EBO
C
cb
V
CB
= 24 V; I
E
= 0
V
EB
= 1.5 V; I
C
= 0
V
CB
= 24 V; V
EB
= 1.5 V;
I
E
= I
C
= 0; f = 1 MHz
V
CB
= 24 V; V
EB
= 1.5 V;
I
E
= I
C
= 0; f = 1 MHz
V
CB
= 24 V; V
EB
= 1 V;
I
E
= I
C
= 0; f = 1 MHz
50
50
1.5
mA
mA
pF
C
ce
collector-emitter capacitance
1.2
pF
C
eb
emitter-base capacitance
30
pF
Fig.3 Load power as a function of frequency.
V
CC
= 24 V; P
S
= 1 W.
handbook, halfpage
1
2
3
5
12
4
0
f (GHz)
PL
(W)
8
4
MGD978
Fig.4
Power gain and efficiency as functions of
frequency.
V
CC
= 24 V; P
S
= 1 W.
handbook, halfpage
1
η
C
f (GHz)
2
3
5
12
4
0
η
C
(%)
Gp
(dB)
8
80
60
20
0
40
4
MGD979
Gp
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