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參數(shù)資料
| 型號(hào)： | PVB42004X |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN microwave power transistor |
| 中文描述： | C BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | SOT-445A, 2 PIN |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 64K |
| 代理商： | PVB42004X |
1997 Feb 19
2
Philips Semiconductors
Product specification
NPN microwave power transistor
PVB42004X
FEATURES
Interdigitated structure provides high emitter efficiency
Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR
Local thick oxide and gold sandwich metallization
realizes very stable characteristics and excellent lifetime
Multicell geometry gives good balance of dissipated
power and low thermal resistance.
APPLICATIONS
Intended for use in common base class-B power
amplifiers up to 4.2 GHz.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a 2-lead rectangular flange package with a ceramic cap
(SOT445A) with the common base connected to the
flange.
PINNING - SOT445A
PIN
DESCRIPTION
1
2
3
collector
emitter
base connected to flange
Fig.1 Simplified outline and symbol.
handbook, halfpage
1
2
MAM251
Top view
3
3
e
c
b
QUICK REFERENCE DATA
Microwave performance up to T
mb
= 25
°
C in a common base class-B test circuit.
MODE OF
OPERATION
f
(GHz)
V
CC
(V)
P
L
(W)
G
p
(dB)
η
C
(%)
Z
i
(
)
Z
L
(
)
Class-B (CW)
1
2
3
4
24
24
24
24
typ. 13
typ. 10
typ. 7.5
typ. 4
typ. 11
typ. 10
typ. 8.8
typ. 6
typ. 60
typ. 48
typ. 30
typ. 25
2.3 + j2.8
1.4 + j9.5
4.2 + j21
38
j32
7.8 + j11.6
3.9 + j2.6
2.3
j2.5
1.9
j8.5
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
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