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參數(shù)資料
| 型號(hào)： | PC100 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | PC100 SDRAM MODULE Preliminary |
| 中文描述： | 初步PC100的內(nèi)存模塊 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 30K |
| 代理商： | PC100 |
FRD MODULE
100A/500V/trr:100nsec
PC100F5
Maximum Ratings
Approx Net Weight:210g
Voltage
Rating
Symbol
PC100F5
Unit
Repetitive Peak Reverse Voltage
per Arm
E lectrical Rating
V
RRM
500
V
Condition
Rating
Average Rectified Output Current
I
O
50Hz Half Sine Wave condition
per Arm Tc=84
°
C
I
F(RMS)
per Arm
50 Hz Half Sine Wave,1cycle
Non-repetitive per Arm
I
2
t
2 msec to 10 msec per Arm
Tjw
Tstg
Viso
Base Plate to Terminal, AC1min
Case mounting(recommended)
Ftor
Terminal Screw(recommended)
100
A
RMS Forward Current
157
A
Surge Forward Current
I
FSM
1800
A
I Squared t
Operating J unctionTemperature Range
Storage Temperature Range
Isoration Voltage
16200
-40 to +150
-40 to +125
2000
2.6
1.4
A
2
s
°
C
°
C
V
Mounting torque
Electrical
Thermal Characteristics
N
m
Characteristics
Symbol
V
FM
I
RM
Test Conditions
Max. Unit
1.35
10
Peak Forward Voltage
Peak Reverse Current
I
FM
= 100A, Tj=25
°
C, per Arm
V
RM
= V
RRM,
Tj= 150
°
C, per Arm
I
FM
= 10A, -di/dt= 50 A/
μ
s, Ta= 25
°
C
Per Arm
Rth(j-c) J unction to Case per Arm
Rth(c-f)Base Plate to Heat Sink with Thermal
Compound
Anode Terminal to Cathode Terminal
Per Element
V
mA
Reverse Recovery Time
trr
100
ns
0.5
Thermal Resistance
0.1
°
C/W
Internal Lead Inductance
Ls
30
nH
FEATURES
* Isolated Base
* Dual Diode Cathode Common
* Ultra Fast Recovery
* High Surge Capability
* UL Recognized, File No. E187184
TYPICAL APPLICATIONS
* High Frequency Rectification
OUTLINE DRAWING
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