參數(shù)資料
型號: P4SMA100CA-HE3/61
廠商: VISHAY SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: 300 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
封裝: ROHS COMPLIANT, PLASTIC, SMA, 2 PIN
文件頁數(shù): 1/5頁
文件大?。?/td> 98K
代理商: P4SMA100CA-HE3/61
Vishay General Semiconductor
P4SMA series
Document Number 88367
14-Sep-06
www.vishay.com
1
Surface Mount TRANSZORB Transient Voltage Suppressors
FEATURES
Low profile package
Ideal for automated placement
Glass passivated chip junction
Available in Unidirectional and Bidirectional 400 W
peak pulse power capability with a 10/1000 s
waveform, repetitive rate (duty cycle): 0.01 % (300 W
above 91 V)
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Meets MSL level 1, per J-STD-020C, LF max peak
of 260 °C
Solder Dip 260 °C, 40 seconds
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use
in
sensitive
electronics
protection
against
voltage transients induced by inductive load switching
and lighting on ICs, MOSFET, signal lines of
sensor units for consumer, computer, industrial and
telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: For unidirectional types the band denotes
cathode end, no marking on bidirectional types
DO-214AC (SMA)
DEVICES FOR BIDIRECTION APPLICATIONS
For bidirectional devices use CA suffix (e.g. P4SMA10CA).
Electrical characteristics apply in both directions.
MAJOR RATINGS AND CHARACTERISTICS
V(BR) Unidirectional
6.8 V to 540 V
V(BR) Bidirectional
6.8 V to 220 V
PPPM
400 W, 300 W
PD
3.3 W
IFSM (Unidirectional only)
40 A
Tj max.
150 °C
Note:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2. Rating is 300 W above 91 V
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak power dissipation with a 10/1000 s waveform (1)(2) (Fig. 1)
PPPM
400
W
Peak pulse current with a 10/1000 s waveform (1) (Fig. 3)
IPPM
see next table
A
Power dissipation on infinite heatsink, TA = 50 °C
PD
3.3
W
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
IFSM
40
A
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 150
°C
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