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參數(shù)資料
| 型號： | OPE5794 |
| 廠商： | Optek Technology |
| 英文描述： | GaAlAs Infrared Emitter |
| 中文描述： | 發(fā)動(dòng)器紅外線發(fā)射器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 117K |
| 代理商： | OPE5794 |
GaAlAs Infrared Emitter
OPE5794
The
OPE5794
is GaAlAs infrared emitting diode DIMENSIONS (Unit:mm)
that is designed for high radiant intensity and
low forward voltage .This device is optimized for efficiency
at emission wavelength 940nm and has a high radiant
efficiency over a wide range of forward current.
This device is packaged T1 plastic package
and has medium beam angle with lensed package
and cup frame
FEATURES
High-output power
Medium beam angle
Available for pulse operating
APPLICATIONS
Optical emitters
Optical switches
Smoke sensors
IR remote control
IR sound transmission
* Please take proper steps in order to secure reliability and safety in required conditions and environments
for this device.
MAXIMUM RATINGS
Item
Symbol
Power dissipation
P
D
Forward current
I
F
Pulse forward current
Reverse voltage
V
R
Operating temp.
Topr.
-20~ +70
Storage temp.
Tstg.
-20~ +80
Soldering temp.
Tsol.
1
.Duty ratio = 1/100, pulse width=0.12ms.
2
.Lead Soldering Temperature (2
mm
from case for 5sec.).
ELECTRO-OPTICALCHARACTERISTICS
(Ta=25
°
C)
Item
Symbol
Forward voltage
V
F
I
F
=40mA
Reverse current
I
R
V
R
= 5V
Capacitance
Ct
f = 1
MHz
Radiant intensity
Ie
I
F
=40mA
Peak emission wavelength
I
F
= 40mA
Spectral bandwidth 50%
I
F
= 40mA
Half angle
I
F
=40mA
(Ta=25
°
C )
Unit
Rating
80
60
0.8
5.0
I
FP
A
°
C
°
C
°
C
2
240
.
Conditions
Min.
Typ.
1.2
20
20
940
45
±
17
Max.
1.5
10
Unit
V
μ
A
pF
mW/
p
nm
nm
deg.
Anode
Cathode
2.5
2-
0.5
2
2
0
3.0
0
5
4
3
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| OPF1412T | Optoelectronic |
| OPF1414T | 1A Low Voltage Low lq LDO, -40C to +125C, 8-SOIC 150mil, T/R |
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