參數(shù)資料
型號(hào): ATTINY84A-MUR
廠(chǎng)商: Atmel
文件頁(yè)數(shù): 14/22頁(yè)
文件大?。?/td> 0K
描述: MCU AVR 8K FLASH 20MHZ 4X4VQFN
產(chǎn)品培訓(xùn)模塊: tinyAVR Introduction
標(biāo)準(zhǔn)包裝: 1
系列: AVR® ATtiny
核心處理器: AVR
芯體尺寸: 8-位
速度: 20MHz
連通性: USI
外圍設(shè)備: 欠壓檢測(cè)/復(fù)位,POR,PWM,溫度傳感器,WDT
輸入/輸出數(shù): 12
程序存儲(chǔ)器容量: 8KB(4K x 16)
程序存儲(chǔ)器類(lèi)型: 閃存
EEPROM 大小: 512 x 8
RAM 容量: 512 x 8
電壓 - 電源 (Vcc/Vdd): 1.8 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 8x10b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 85°C
封裝/外殼: 20-WFQFN 裸露焊盤(pán)
包裝: 標(biāo)準(zhǔn)包裝
其它名稱(chēng): ATTINY84A-MURDKR
21
8183FS–AVR–06/12
ATtiny24A/44A/84A
Section 6. “Ordering Information” on page 11, added tape & reel and topside
marking, updated notes
5.
Updated Figures:
Figure 4-1 “Block Diagram of the AVR Architecture” on page 7
Figure 8-1 “Reset Logic” on page 38
Figure 14-1 “Universal Serial Interface, Block Diagram” on page 116, USIDB ->
USIBR
Figure 19-5 “High-voltage Serial Programming Waveforms” on page 169
6.
Updated Tables:
Table 19-11, “Minimum Wait Delay Before Writing the Next Flash or EEPROM
Location,” on page 164, updated value for t
WD_ERASE
9.6
Rev. 8183A – 12/08
1.
Initial revision. Created from document 8006H.
2.
Updated "Ordering Information" on page 19 and page 19. Pb-plated packages are no
longer offered and there are no separate ordering codes for commercial operation
range, the only available option now is industrial. Also, updated some order codes to
reflect changes in leadframe composition and added VQFN package option.
3.
Updated data sheet template.
4.
Removed all references to 8K device.
5.
Updated characteristic plots of section “Typical Characteristics”, starting on page 182.
6.
Added characteristic plots:
“Bandgap Voltage vs. Supply Voltage” on page 233
“Bandgap Voltage vs. Temperature” on page 233
7.
Updated sections:
“Power Reduction Register” on page 35
“Analog Comparator” on page 128
“Features” on page 132
“Operation” on page 133
“Starting a Conversion” on page 134
“ADC Voltage Reference” on page 139
“Speed” on page 174
8.
Updated Figures:
“Program Memory Map” on page 15
“Data Memory Map” on page 16
9.
Update Tables:
“Device Signature Bytes” on page 161
“DC Characteristics. TA = -40°C to +85°C” on page 173
“Additional Current Consumption for the different I/O modules (absolute values)” on
page 182
“Additional Current Consumption (percentage) in Active and Idle mode” on page 183
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