參數(shù)資料
型號(hào)： NTE390
廠商： NTE Electronics, Inc.
英文描述： Silicon Complementary Transistors General Purpose
中文描述： 硅晶體管通用互補(bǔ)
文件頁(yè)數(shù)： 2/2頁(yè)
文件大?。?/td> 21K
代理商： NTE390
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
OFF Characteristics
Collector
–
Emitter Sustaining Voltage V
CEO(sus)
I
C
= 30mA, I
B
= 0, Note 2
Collector
–
Emitter Cutoff Current
Symbol
Test Conditions
Min
Typ
Max
Unit
100
–
–
–
–
–
–
–
–
V
I
CEO
I
CES
I
EBO
V
CE
= 60V, I
B
= 0
V
CE
= 100V, V
EB
= 0
V
EB
= 5V, I
C
= 0
0.7
0.4
1
mA
mA
mA
Emitter
–
Base Cutoff Current
ON Characteristics
(Note 2)
DC Current Gain
h
FE
I
C
= 1A, V
CE
= 4V
I
C
= 3A, V
CE
= 4V
I
C
= 3A, I
B
= 0.3A
I
C
= 10A, I
B
= 2.5A
I
C
= 3A, V
CE
= 4V
I
C
= 10A, V
CE
= 4V
40
20
–
–
–
–
–
–
–
–
–
–
–
100
1
4
1.6
3.0
Collector
–
Emitter Saturation Voltage
V
CE(sat)
V
V
V
V
Base
–
Emitter ON Voltage
V
BE(on)
Dynamic Characteristics
Small
–
Signal Current Gain
Current
–
Gain Bandwidth Product
h
fe
f
T
I
C
= 0.5A, V
CE
= 10V, f = 1kHz
I
C
= 0.5A, V
CE
= 10V,
f = 1MHz, Note 3
20
3
–
–
–
–
MHz
Note 2. Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
≤
2%.
Note 3. f
T
= |h
fe
| f
test
NOTE:
Dotted line indicates that
case may have square corners
B
C
E
C
.156
(3.96)
Dia.
.600
(15.24)
.550
(13.97)
.430
(10.92)
.500
(12.7)
Min
.216 (5.45)
.055 (1.4)
.015 (0.39)
.173 (4.4)
.060 (1.52)
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參數(shù)描述
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