- 您現在的位置：買賣IC網 > PDF目錄361155 > NTD20N06L-1 (ON SEMICONDUCTOR) Power MOSFET 20 Amps, 60 Volts, Logic Level PDF資料下載
參數資料
| 型號： | NTD20N06L-1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 20 Amps, 60 Volts, Logic Level |
| 中文描述： | 20 A, 60 V, 0.048 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369D-01, DPAK-3 |
| 文件頁數： | 2/12頁 |
| 文件大?。?/td> | 89K |
| 代理商： | NTD20N06L-1 |
NTD20N06L
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (Note 3.)
(V
GS
= 0 Vdc, I
D
= 250
μ
Adc)
Temperature Coefficient (Positive)
V
(BR)DSS
60
71.3
71.2
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
(V
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
= 150
°
C)
I
DSS
1.0
10
μ
Adc
GateBody Leakage Current (V
GS
=
±
15
Vdc, V
DS
= 0 Vdc)
I
GSS
±
100
nAdc
ON CHARACTERISTICS
(Note 3.)
Gate Threshold Voltage (Note 3.)
(V
DS
= V
GS
, I
D
= 250
μ
Adc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
1.6
4.6
2.0
Vdc
mV/
°
C
Static DraintoSource OnResistance (Note 3.)
(V
GS
= 5.0 Vdc, I
D
= 10 Adc)
R
DS(on)
39
48
m
Static DraintoSource OnResistance (Note 3.)
(V
GS
= 5.0 Vdc, I
D
= 20 Adc)
(V
GS
= 5.0 Vdc, I
D
= 10 Adc, T
J
= 150
°
C)
V
DS(on)
0.81
0.72
1.66
Vdc
Forward Transconductance (Note 3.) (V
DS
= 4.0 Vdc, I
D
= 10 Adc)
g
FS
17.5
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
707
990
pF
Output Capacitance
C
oss
224
320
Transfer Capacitance
C
rss
72
105
SWITCHING CHARACTERISTICS
(Note 4.)
TurnOn Delay Time
t
d(on)
9.6
20
ns
Rise Time
(V
DD
= 30 Vdc, I
D
= 20 Adc,
= 5 0 Vdc
V
GS
= 5.0 Vdc,
= 9.1
R
G
9.1
) (Note 3.)
t
r
98
200
TurnOff Delay Time
t
d(off)
25
50
Fall Time
t
f
62
120
Gate Charge
(V
DS
= 48 Vdc, I
D
= 20 Adc,
V
GS
= 5.0 Vdc) (Note 3.)
Q
T
16.6
32
nC
Q
1
5.5
Q
2
8.5
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(I
S
= 20 Adc, V
GS
= 0 Vdc) (Note 3.)
(I
S
= 20 Adc, V
GS
= 0 Vdc, T
J
= 150
°
C)
V
SD
0.97
0.85
1.2
Vdc
Reverse Recovery Time
(I
S
= 20 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/
μ
s) (Note 3.)
t
rr
42
ns
t
a
30
t
b
12
Reverse Recovery Stored Charge
Q
RR
0.066
μ
C
3. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperatures.
相關PDF資料 |
PDF描述 |
|---|---|
| NTD20N06LT4 | Power MOSFET 20 Amps, 60 Volts, Logic Level |
| NTD20P06L | Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK |
| NTD20P06LG | Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK |
| NTD20P06LT4 | Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK |
| NTD20P06LT4G | Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK |
相關代理商/技術參數 |
參數描述 |
|---|---|
| NTD20N06L-1G | 功能描述:MOSFET 60V 20A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD20N06LG | 功能描述:MOSFET 60V 20A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD20N06LT4 | 功能描述:MOSFET 60V 20A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD20N06LT4G | 功能描述:MOSFET 60V 20A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD20N06T4 | 功能描述:MOSFET 60V 20A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。