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參數(shù)資料
| 型號： | NTD15N06LT4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | TRANSF T1/E1 1.14CT:1 EE5 SMD |
| 中文描述： | 15 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369C-01, DPAK-3 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 93K |
| 代理商： | NTD15N06LT4 |
NTD15N06L
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (Note 3)
(V
GS
= 0 Vdc, I
D
= 250 Adc)
Temperature Coefficient (Positive)
V
(BR)DSS
60
70
62.9
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
(V
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
= 150
°
C)
I
DSS
1.0
10
Adc
GateBody Leakage Current (V
GS
=
±
15
Vdc, V
DS
= 0 Vdc)
I
GSS
±
100
nAdc
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage (Note 3)
(V
DS
= V
GS
, I
D
= 250 Adc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
1.6
4.2
2.0
Vdc
mV/
°
C
Static DraintoSource OnResistance (Note 3)
(V
GS
= 5.0 Vdc, I
D
= 7.5 Adc)
R
DS(on)
85
100
m
Static DraintoSource OnVoltage (Note 3)
(V
GS
= 5.0 Vdc, I
D
= 15 Adc)
(V
GS
= 5.0 Vdc, I
D
= 7.5 Adc, T
J
= 125
°
C)
V
DS(on)
1.46
1.2
1.8
Vdc
Forward Transconductance (Note 3) (V
DS
= 8.0 Vdc, I
D
= 6.0 Adc)
g
FS
9.1
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
310
440
pF
Output Capacitance
C
oss
106
150
Transfer Capacitance
C
rss
37
70
SWITCHING CHARACTERISTICS
(Note 4)
TurnOn Delay Time
t
d(on)
11
20
ns
Rise Time
= 30 Vdc, I
= 15 Adc,
(V
DD
D
15 Adc,
V
GS
= 5.0 Vdc, R
G
= 9.1 ) (Note 3)
t
r
120
210
TurnOff Delay Time
t
d(off)
11
40
Fall Time
t
f
42
80
Gate Charge
(V
DS
= 48 Vdc, I
D
= 15 Adc,
V
GS
= 5.0 Vdc) (Note 3)
Q
T
7.3
20
nC
Q
1
2.3
Q
2
4.4
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(I
S
= 15 Adc, V
GS
= 0 Vdc) (Note 3)
(I
S
= 15 Adc, V
GS
= 0 Vdc, T
J
= 150
°
C)
V
SD
0.96
0.83
1.2
Vdc
Reverse Recovery Time
(I
S
= 15 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ s) (Note 3)
t
rr
35
ns
t
a
23
t
b
12
Reverse Recovery Stored Charge
3. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperatures.
Q
RR
0.043
C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTD15N06LT4G | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| NTD15N06T4 | 功能描述:MOSFET N-CH 60V 15A DPAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| NTD15N06T4G | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| NTD15N08/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:80 V Power MOSFET |
| NTD16N06 | 制造商:ON Semiconductor 功能描述: |
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