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參數(shù)資料
| 型號： | NTD15N06L-1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 15 Amps, 60 Volts, Logic Level |
| 中文描述： | 15 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369D-01, DPAK-3 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 93K |
| 代理商： | NTD15N06L-1 |
NTD15N06L
http://onsemi.com
4
POWER MOSFET SWITCHING
Switching behavior is most easily modeled and predicted
by recognizing that the power MOSFET is charge
controlled. The lengths of various switching intervals ( t)
are determined by how fast the FET input capacitance can
be charged by current from the generator.
The published capacitance data is difficult to use for
calculating rise and fall because draingate capacitance
varies greatly with applied voltage. Accordingly, gate
charge data is used. In most cases, a satisfactory estimate of
average input current (I
G(AV)
) can be made from a
rudimentary analysis of the drive circuit so that
t = Q/I
G(AV)
During the rise and fall time interval when switching a
resistive load, V
GS
remains virtually constant at a level
known as the plateau voltage, V
SGP
. Therefore, rise and fall
times may be approximated by the following:
t
r
= Q
2
x R
G
/(V
GG
V
GSP
)
t
f
= Q
2
x R
G
/V
GSP
where
V
GG
= the gate drive voltage, which varies from zero to V
GG
R
G
= the gate drive resistance
and Q
2
and V
GSP
are read from the gate charge curve.
During the turnon and turnoff delay times, gate current is
not constant. The simplest calculation uses appropriate
values from the capacitance curves in a standard equation for
voltage change in an RC network. The equations are:
t
d(on)
= R
G
C
iss
In [V
GG
/(V
GG
V
GSP
)]
t
d(off)
= R
G
C
iss
In (V
GG
/V
GSP
)
The capacitance (C
iss
) is read from the capacitance curve at
a voltage corresponding to the offstate condition when
calculating t
d(on)
and is read at a voltage corresponding to the
onstate when calculating t
d(off)
.
At high switching speeds, parasitic circuit elements
complicate the analysis. The inductance of the MOSFET
source lead, inside the package and in the circuit wiring
which is common to both the drain and gate current paths,
produces a voltage at the source which reduces the gate drive
current. The voltage is determined by Ldi/dt, but since di/dt
is a function of drain current, the mathematical solution is
complex. The MOSFET output capacitance also
complicates the mathematics. And finally, MOSFETs have
finite internal gate resistance which effectively adds to the
resistance of the driving source, but the internal resistance
is difficult to measure and, consequently, is not specified.
The resistive switching time variation versus gate
resistance (Figure 9) shows how typical switching
performance is affected by the parasitic circuit elements. If
the parasitics were not present, the slope of the curves would
maintain a value of unity regardless of the switching speed.
The circuit used to obtain the data is constructed to minimize
common inductance in the drain and gate circuit loops and
is believed readily achievable with board mounted
components. Most power electronic loads are inductive; the
data in the figure is taken with a resistive load, which
approximates an optimally snubbed inductive load. Power
MOSFETs may be safely operated into an inductive load;
however, snubbing reduces switching losses.
C
rss
5
10
0
10
15
20
25
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (VOLTS)
C
Figure 7. Capacitance Variation
1200
600
0
V
GS
V
DS
200
5
V
GS
= 0 V
V
DS
= 0 V
T
J
= 25
°
C
C
iss
C
oss
C
rss
C
iss
1000
400
800
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NTD15N06L-1G | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| NTD15N06LG | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 15A 3-Pin(2+Tab) DPAK Rail 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述:MOSFET |
| NTD15N06LT4 | 功能描述:MOSFET N-CH 60V 15A DPAK RoHS:否 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| NTD15N06LT4G | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| NTD15N06T4 | 功能描述:MOSFET N-CH 60V 15A DPAK RoHS:否 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
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