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參數(shù)資料
| 型號(hào)： | NTD110N02RT4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | JFETs |
| 英文描述： | Power MOSFET |
| 中文描述： | 12.5 A, 24 V, 0.0062 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369AA-01, DPAK-3 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 64K |
| 代理商： | NTD110N02RT4 |
NTD110N02R
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (Note 3)
(V
GS
= 0 V, I
D
= 250 A)
Positive Temperature Coefficient
V
(BR)DSS
24
28
15
V
mV/
°
C
Zero Gate Voltage Drain Current
(V
DS
= 20 V, V
GS
= 0 V)
(V
DS
= 20 V, V
GS
= 0 V, T
J
= 125
°
C)
I
DSS
1.5
10
A
GateBody Leakage Current (V
GS
=
±
20 V, V
DS
= 0 V)
I
GSS
±
100
nA
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage (Note 3)
(V
DS
= V
GS
, I
D
= 250 A)
Negative Threshold Temperature Coefficient
V
GS(th)
1.0
1.5
5.0
2.0
V
mV/
°
C
Static DraintoSource OnResistance (Note 3)
(V
GS
= 10 V, I
D
= 110 A)
(V
GS
= 4.5 V, I
D
= 55 A)
(V
GS
= 10 V, I
D
= 20 A)
(V
GS
= 4.5 V, I
D
= 20 A)
R
DS(on)
4.1
5.5
3.9
5.5
4.6
6.2
m
Forward Transconductance (V
DS
= 10 V, I
D
= 15 A) (Note 3)
g
FS
44
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 20 V, V
GS
= 0 V,
f = 1.0 MHz)
20 V V
C
iss
2710
3440
pF
Output Capacitance
C
oss
1105
1670
Transfer Capacitance
C
rss
450
640
SWITCHING CHARACTERISTICS
(Note 4)
TurnOn Delay Time
t
d(on)
11
22
ns
Rise Time
= 10 V, V
= 10 V,
(V
GS
10 V, V
DD
10 V,
I
D
= 40 A, R
G
= 3.0 )
t
r
39
80
TurnOff Delay Time
t
d(off)
27
40
Fall Time
t
f
21
40
Gate Charge
(V
GS
= 4.5 V, I
D
= 40 A,
V
DS
= 10 V) (Note 3)
4 5 V I
Q
T
23.6
28
nC
Q
GS
5.1
Q
DS
11
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(I
S
= 20 A, V
GS
= 0 V) (Note 3)
= 55 A, V
= 0 V)
(I
S
55 A, V
GS
0 V)
(I
S
= 20 A, V
GS
= 0 V, T
J
= 125
°
C)
V
SD
0.82
0.99
0.65
1.2
V
Reverse Recovery Time
(I
S
= 30 A, V
GS
= 0 V,
dI
S
/dt = 100 A/ s) (Note 3)
30 A V
t
rr
36.5
ns
t
a
30
t
b
25
Reverse Recovery Stored Charge
Q
rr
0.048
C
3. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperatures.
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| NTD110N02RT4G | 功能描述:MOSFET 24V 110A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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