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NLAS323
http://onsemi.com
4
ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted)
VCC
Limit
Symbol
Parameter
Condition
V
25
°C
Unit
BW
Maximum OnChannel 3dB Bandwidth
VIS = 0 dBm
3.0
190
MHz
BW
Maximum OnChannel 3dB Bandwidth
or Minimum Frequency Response
VIS = 0 dBm
VIS centered between VCC and GND
3.0
4.5
190
200
MHz
or Minimum Frequency Res onse
VIS centered between VCC and GND
4.5
5.5
200
220
VONL
Maximum Feedthrough On Loss
VIS = 0 dBm @ 10 kHz
3.0
2
dB
VONL
Maximum Feedthrough On Loss
VIS = 0 dBm @ 10 kHz
VIS centered between VCC and GND
3.0
4.5
2
dB
VIS centered between VCC and GND
4.5
5.5
2
VISO
OffChannel Isolation
f = 100 kHz; VIS = 1.0 V RMS
3.0
93
dB
VISO
OffChannel Isolation
f = 100 kHz VIS = 1.0 V RMS
VIS centered between VCC and GND
3.0
4.5
93
dB
VIS centered between VCC and GND
4.5
5.5
Q
Charge Injection
VIS = VCC to GND, FIS = 20 kHz
3.0
1.5
Q
Charge Injection
Enable Input to Common I/O
VIS = VCC to GND, FIS = 20 kHz
tr = tf = 3.0 ns
3.0
5.5
1.5
3.0
pC
Enable In ut to Common I/O
tr
tf
3.0 ns
RIS = 0 W, CL = 1000 pF
QC *
DV
5.5
3.0
C
IS
L
Q = CL * DVOUT
THD
Total Harmonic Distortion
FIS = 20 Hz to 1 MHz, RL = Rgen = 600 W, CL = 50 pF
3.3
0.3
%
THD
Total Harmonic Distortion
THD + Noise
FIS = 20 Hz to 1 MHz, RL = Rgen = 600 W, CL = 50 F
VIS = 3.0 VPP sine wave
3.3
5.5
0.3
0.15
%
THD + Noise
VIS
3.0 VPP sine wave
VIS = 5.0 VPP sine wave
(Fi
5.5
0.15
IS
PP
55
1.00E+03
5
1.00E01
15
35
LEAKAGE
(pA)
1.00E04
Figure 3. Switch Leakage vs. Temperature
1.00E+05
INO(OFF)
TEMPERATURE (
°C)
1.00E03
1.00E02
1.00E+00
1.00E+02
1.00E+04
25
45
1.00E05
1.00E06
1.00E07
1.00E+01
65
85
105 125 145
ICOM(ON)
ICOM(OFF)