參數(shù)資料
型號: NCP1014APL100R2G
廠商: ON SEMICONDUCTOR
元件分類: 穩(wěn)壓器
英文描述: Self−Supplied Monolithic Switcher for Low Standby−Power Offline SMPS
中文描述: 1 A SWITCHING REGULATOR, 110 kHz SWITCHING FREQ-MAX, PDSO7
封裝: LEAD FREE, GULLWING, PLASTIC, DIP-8/7
文件頁數(shù): 5/24頁
文件大?。?/td> 485K
代理商: NCP1014APL100R2G
NCP1010, NCP1011, NCP1012, NCP1013, NCP1014
http://onsemi.com
5
ELECTRICAL CHARACTERISTICS
(For typical values T
J
= 25
°
C, for min/max values T
J
= 0
°
C to +125
°
C, Max T
J
= 150
°
C,
V
CC
= 8.0 V unless otherwise noted.)
Rating
Pin
Symbol
Min
Typ
Max
Unit
SUPPLY SECTION AND V
CC
MANAGEMENT
V
CC
Increasing Level at which the Current Source Turns
off
V
CC
Decreasing Level at which the Current Source Turns
on
Hysteresis between VCC
OFF
and VCC
ON
V
CC
Decreasing Level at which the Latch
off Phase Ends
V
CC
Decreasing Level at which the Internal Latch is Released
Internal IC Consumption, MOSFET Switching at 65 kHz
1
1
1
1
1
1
VCC
OFF
VCC
ON
VCC
latch
VCC
reset
ICC1
7.9
6.9
4.4
8.5
7.5
1.0
4.7
3.0
0.92
9.1
8.1
5.1
1.1
V
V
V
V
V
(Note 2)
mA
Internal IC Consumption, MOSFET Switching at 100 kHz
1
ICC1
0.95
1.15
(Note 2)
mA
Internal IC Consumption, MOSFET Switching at 130 kHz
1
ICC1
0.98
1.2
(Note 2)
mA
Internal IC Consumption, Latch
off Phase, V
CC
= 6.0 V
Active Zener Voltage Positive Offset to VCC
OFF
Latch
off Current
NCP1012/13/14
NCP1010/11
1
1
1
ICC2
Vclamp
ILatch
290
200
A
140
300
mV
mA
6.3
5.8
7.4
7.3
9.2
9.0
POWER SWITCH CIRCUIT
Power Switch Circuit On
state Resistance
NCP1012/13/14 (Id = 50 mA)
T
J
= 25
°
C
T
J
= 125
°
C
NCP1010/11 (Id = 50 mA)
T
J
= 25
°
C
T
J
= 125
°
C
Power Switch Circuit and Startup Breakdown Voltage
(ID
(off)
= 120 A, T
J
= 25
°
C)
Power Switch and Startup Breakdown Voltage Off
state
Leakage Current
T
J
= 25
°
C (Vds = 700 V)
T
J
= 125
°
C (Vds = 700 V)
5
R
DSon
11
19
22
38
16
24
35
50
5
BVdss
700
V
5
5
I
DS(OFF
)
50
30
A
Switching Characteristics
(RL = 50 , Vds Set for Idrain = 0.7 x Ilim)
Turn
on Time (90%
10%)
Turn
off Time (10%
90%)
5
5
ton
toff
20
10
ns
INTERNAL STARTUP CURRENT SOURCE
High
voltage Current Source, V
CC
= 8.0 V
NCP1012/13/14
NCP1010/11
1
IC1
5.0
5.0
8.0
8.5
10
10.3
mA
High
voltage Current Source, V
CC
= 0
CURRENT COMPARATOR
T
J
= 25
°
C (Note 2)
Maximum Internal Current Setpoint, NCP1010 (Note 3)
Maximum Internal Current Setpoint, NCP1011 (Note 3)
Maximum Internal Current Setpoint, NCP1012 (Note 3)
Maximum Internal Current Setpoint, NCP1013 (Note 3)
Maximum Internal Current Setpoint, NCP1014 (Note 3)
Default Internal Current Setpoint for Skip
Cycle Operation,
Percentage of Max Ip
1
IC2
10
mA
5
5
5
5
5
Ipeak (22)
Ipeak (22)
Ipeak (11)
Ipeak (11)
Ipeak (11)
I
Lskip
90
225
225
315
405
100
250
250
350
450
25
110
275
275
385
495
mA
mA
mA
mA
mA
%
Propagation Delay from Current Detection to Drain OFF State
Leading Edge Blanking Duration
2. See characterization curves for temperature evolution.
3. Adjust di/dt to reach Ipeak in 3.2 sec.
T
DEL
T
LEB
125
250
ns
ns
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