參數(shù)資料
型號: NAND99W3M1AZBC5F
廠商: NUMONYX
元件分類: 存儲器
英文描述: SPECIALTY MEMORY CIRCUIT, PBGA137
封裝: 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-137
文件頁數(shù): 25/33頁
文件大?。?/td> 724K
代理商: NAND99W3M1AZBC5F
NANDxxxxMx
Ordering information
31/32
6
Ordering information
Note:
Devices are shipped from the factory with the flash memory content bits, in valid blocks,
erased to ’1’. For further information on any aspect of this device, please contact your
nearest Numonyx sales office.
Table 12.
Ordering information scheme
Example:
NAND8
8 R 3 M 0
A
ZBB 5
E
Device type
NAND flash memory
NAND flash density
8 = 256 Mbits
9 = 512 Mbits
A = 1 Gbit
DRAM density
8 = 256 Mbits
9 = 512 Mbits
NAND flash operating voltage
R = 1.7 V to 1.95 V
W = 2.5 V to 3.6 V
NAND bus width
3 = x8
4 = x16
Family identifier
M = 528-byte page NAND flash memory
DRAM options
0 = SDR, x16, 133 MHz
1 = SDR, ×32, 133 MHz
2 = DDR, x16, 133 MHz
Product version
A
B
C
Package
ZBA = TFBGA149, 10 × 13.5 x 1.2 mm
ZBB = TFBGA107 10.5 × 13 x 1.2 mm
ZBC = TFBGA137 10.5 x 13 x 1.2 mm
ZPA = TFBGA152, 14 × 14 x 1.1 mm
Temperature
5 = –30 °C to 85 °C
Option
E = ECOPACK package, standard packing
F = ECOPACK package, tape and reel packing
相關(guān)PDF資料
PDF描述
NANDB9R4N2BZBA5F SPECIALTY MEMORY CIRCUIT, PBGA149
NANDBAR4N1BZBC5F SPECIALTY MEMORY CIRCUIT, PBGA137
NANDB9R4N2CZBA5E SPECIALTY MEMORY CIRCUIT, PBGA149
NB06QSA035 6 A, 35 V, SILICON, RECTIFIER DIODE
NB100LVEP224FAR2G 100LVE SERIES, LOW SKEW CLOCK DRIVER, 24 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PQFP64
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NANDA8R3N0AZBB5E 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays
NANDA8R3N1AZBC5E 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays
NANDA8R3N1AZBC5F 制造商:Micron Technology Inc 功能描述:WIRELESS - Tape and Reel
NANDA8R3N8AZBB5E 制造商:Micron Technology Inc 功能描述:128MX8/16MX16 MCP PLASTIC WIRELESS TEMP PBF TFBGA 1.8V - Trays
NANDA8R3N8AZBB5F 制造商:Micron Technology Inc 功能描述:128MX8/16MX16 MCP PLASTIC WIRELESS TEMP PBF TFBGA 1.8V - Tape and Reel