參數(shù)資料
型號(hào)： NAND512R4A2CZA6E
廠商： 意法半導(dǎo)體
英文描述： 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
中文描述： 512兆位，528 Byte/264字的頁(yè)面，1.8V/3V，NAND閃存芯片
文件頁(yè)數(shù)： 24/51頁(yè)
文件大?。?/td> 517K
代理商： NAND512R4A2CZA6E
Software algorithms
NAND512-A2C
30/51
7.3
Garbage Collection
When a data page needs to be modified, it is faster to write to the first available page, and
the previous page is marked as invalid. After several updates it is necessary to remove
invalid pages to free some memory space.
To free this memory space and allow further program operations it is recommended to
implement a Garbage Collection algorithm. In a Garbage Collection software the valid
pages are copied into a free area and the block containing the invalid pages is erased (see
Figure 14).
Figure 14.
Garbage Collection
7.4
Wear-leveling algorithm
For write-intensive applications, it is recommended to implement a Wear-leveling Algorithm
to monitor and spread the number of write cycles per block.
In memories that do not use a Wear-Leveling Algorithm not all blocks get used at the same
rate. Blocks with long-lived data do not endure as many write cycles as the blocks with
frequently-changed data.
The Wear-leveling Algorithm ensures that equal use is made of all the available write cycles
for each block. There are two wear-leveling levels:
●
First Level Wear-leveling, new data is programmed to the free blocks that have had the
fewest write cycles
●
Second Level Wear-leveling, long-lived data is copied to another block so that the
original block can be used for more frequently-changed data.
The Second Level Wear-leveling is triggered when the difference between the maximum
and the minimum number of write cycles per block reaches a specific threshold.
7.5
Error Correction Code
An Error Correction Code (ECC) can be implemented in the Nand Flash memories to
identify and correct errors in the data.
For every 2048 bits in the device it is recommended to implement 22 bits of ECC (16 bits for
line parity plus 6 bits for column parity).
Valid
Page
Invalid
Page
Free
Page
(Erased)
Old Area
AI07599B
New Area (After GC)
相關(guān)PDF資料
PDF描述
NAND512R4A2CZA6F 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND512R4A2C 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND512W3A2CZA6E 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND512W3A2C 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAT-3DC-2A+ 1000 MHz - 3500 MHz RF/MICROWAVE FIXED ATTENUATOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NAND512R4A2DDI6 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film
NAND512W3A0AN6 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
NAND512W3A0AN6E 功能描述:閃存 2.7-3.6V 512M(64Mx8) RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
NAND512W3A0AN6F 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 3V/3.3V 512MBIT 64MX8 12US 48TSOP - Tape and Reel
NAND512W3A0AV6E 功能描述:IC FLASH 512MBIT 48WSOP RoHS:是 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:576 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類(lèi)型:閃存 - NAND 存儲(chǔ)容量:512M（64M x 8） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤(pán) 其它名稱:497-5040
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