參數(shù)資料
型號(hào)： NAND512R4A2CN6F
廠商： 意法半導(dǎo)體
英文描述： 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
中文描述： 512兆位，528 Byte/264字的頁面，1.8V/3V，NAND閃存芯片
文件頁數(shù)： 25/51頁
文件大?。?/td> 517K
代理商： NAND512R4A2CN6F
NAND512-A2C
Software algorithms
31/51
An ECC model is available in VHDL or Verilog. Contact the nearest ST Microelectronics
sales office for more details.
Figure 15.
Error Detection
7.6
Hardware simulation models
7.6.1
Behavioral simulation models
Denali Software Corporation models are platform independent functional models designed
to assist customers in performing entire system simulations (typical VHDL/Verilog). These
models describe the logic behavior and timings of NAND Flash devices, and so allow
software to be developed before hardware.
7.6.2
IBIS simulations models
IBIS (I/O Buffer Information Specification) models describe the behavior of the I/O buffers
and electrical characteristics of Flash devices.
These models provide information such as AC characteristics, rise/fall times and package
mechanical data, all of which are measured or simulated at voltage and temperature ranges
wider than those allowed by target specifications.
IBIS models are used to simulate PCB connections and can be used to resolve compatibility
issues when upgrading devices. They can be imported into SPICETOOLS.
New ECC generated
during read
XOR previous ECC
with new ECC
All results
= zero?
22 bit data = 0
YES
11 bit data = 1
NO
1 bit data = 1
Correctable
Error
ECC Error
No Error
ai08332
>1 bit
= zero?
YES
NO
相關(guān)PDF資料
PDF描述
NAND512R4A2CZA6E 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND512R4A2CZA6F 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND512R4A2C 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND512W3A2CZA6E 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND512W3A2C 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NAND512R4A2CWFD 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film
NAND512R4A2CZA6 制造商:Micron Technology Inc 功能描述:512MB. 3V X8 NO OPTION TSOP48TSOP-1 48 12X20 AL 42 - Trays
NAND512R4A2DDI6 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film
NAND512W3A0AN6 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
NAND512W3A0AN6E 功能描述:閃存 2.7-3.6V 512M(64Mx8) RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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