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參數(shù)資料
| 型號： | NAND512R4A2C |
| 廠商： | 意法半導體 |
| 英文描述： | 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| 中文描述： | 512兆位，528 Byte/264字的頁面，1.8V/3V，NAND閃存芯片 |
| 文件頁數(shù)： | 3/51頁 |
| 文件大小： | 517K |
| 代理商： | NAND512R4A2C |
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NAND512-A2C
Memory array organization
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Memory array organization
The memory array is made up of NAND structures where 16 cells are connected in series.
The memory array is organized in blocks where each block contains 32 pages. The array is
split into two areas, the main area and the spare area. The main area of the array is used to
store data whereas the spare area is typically used to store Error correction Codes, software
flags or Bad Block identification.
In x8 devices the pages are split into a main area with two half pages of 256 Bytes each and
a spare area of 16 Bytes. In the x16 devices the pages are split into a 256 Word main area
and an 8 Word spare area. Refer to Figure 5: Memory array organization.
Bad blocks
The NAND Flash 528 Byte/ 264 Word Page devices may contain Bad Blocks, that is blocks
that contain one or more invalid bits whose reliability is not guaranteed. Additional Bad
Blocks may develop during the lifetime of the device.
The Bad Block Information is written prior to shipping (refer to Section 7.1: Bad Block
management for more details).
Table 4 shows the minimum number of valid blocks in each device. The values shown
include both the Bad Blocks that are present when the device is shipped and the Bad Blocks
that could develop later on.
These blocks need to be managed using Bad Blocks Management, Block Replacement or
Error Correction Codes (refer to Section 7: Software algorithms).
Table 4.
Valid blocks
Density of Device
Min
Max
512Mbits
4016
4096
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PDF描述 |
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| NAND512W3A2CZA6E | 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND512W3A2C | 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAT-3DC-2A+ | 1000 MHz - 3500 MHz RF/MICROWAVE FIXED ATTENUATOR |
| NC26SM-SLF-0.032768MHZ-EZM12510 | QUARTZ CRYSTAL RESONATOR, 0.032768 MHz |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NAND512R4A2CWFD | 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film |
| NAND512R4A2CZA6 | 制造商:Micron Technology Inc 功能描述:512MB. 3V X8 NO OPTION TSOP48TSOP-1 48 12X20 AL 42 - Trays |
| NAND512R4A2DDI6 | 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film |
| NAND512W3A0AN6 | 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| NAND512W3A0AN6E | 功能描述:閃存 2.7-3.6V 512M(64Mx8) RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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