- 您現在的位置：買賣IC網 > PDF目錄296674 > NAND512R4A2C (意法半導體) 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories PDF資料下載
參數資料
| 型號： | NAND512R4A2C |
| 廠商： | 意法半導體 |
| 英文描述： | 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| 中文描述： | 512兆位，528 Byte/264字的頁面，1.8V/3V，NAND閃存芯片 |
| 文件頁數： | 17/51頁 |
| 文件大?。?/td> | 517K |
| 代理商： | NAND512R4A2C |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁當前第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁
Device operations
NAND512-A2C
24/51
6.4
Copy Back Program
The Copy Back Program operation is used to copy the data stored in one page and
reprogram it in another page.
The Copy Back Program operation does not require external memory and so the operation
is faster and more efficient because the reading and loading cycles are not required. The
operation is particularly useful when a portion of a block is updated and the rest of the block
needs to be copied to the newly assigned block.
If the Copy Back Program operation fails an error is signalled in the Status Register.
However as the standard external ECC cannot be used with the Copy Back operation bit
error due to charge loss cannot be detected. For this reason it is recommended to limit the
number of Copy Back operations on the same data and or to improve the performance of the
ECC.
The Copy Back Program operation requires two steps:
1.
The source page must be read using the Read A command (one bus write cycle to
setup the command and then 4 bus write cycles to input the source page address).
This operation copies all 264 Words/ 528 Bytes from the page into the Page Buffer.
2.
When the device returns to the ready state (Ready/Busy High), the second bus write
cycle of the command is given with the 4 bus cycles to input the target page address.
Refer to Table 10 for the addresses that must be the same for the Source and Target
pages.
3.
The Program Confirm command (code 10h) is no more necessary on NAND512-A2C
devices. It is optional and has been maintained for backward compatibility.
After a Copy Back Program operation, a partial-page program is not allowed in the target
page until the block has been erased.
See Figure 11 for an example of the Copy Back operation.
Figure 11.
Copy Back operation
1.
The Program Confirm command (code 10h) is no more necessary on NAND512-A2C devices. It is optional and has been
maintained for backward compatibility.
Table 10.
Copy Back Program addresses
Density
Same Address for Source and Target Pages
512 Mbit
A25
I/O
RB
Source
Address Inputs
SR0
ai13187
8Ah
70h
00h
Copy Back
Code
Read
Code
Read Status Register
Target
Address Inputs
tBLBH1
(Read Busy time)
10h(1)
Busy
tBLBH2
(Program Busy time)
相關PDF資料 |
PDF描述 |
|---|---|
| NAND512W3A2CZA6E | 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND512W3A2C | 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAT-3DC-2A+ | 1000 MHz - 3500 MHz RF/MICROWAVE FIXED ATTENUATOR |
| NC26SM-SLF-0.032768MHZ-EZM12510 | QUARTZ CRYSTAL RESONATOR, 0.032768 MHz |
| NCB-CA55SMPGA1 | 77 CONTACT(S), MALE, STRAIGHT TWO PART BOARD CONNECTOR, PRESS FIT |
相關代理商/技術參數 |
參數描述 |
|---|---|
| NAND512R4A2CWFD | 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film |
| NAND512R4A2CZA6 | 制造商:Micron Technology Inc 功能描述:512MB. 3V X8 NO OPTION TSOP48TSOP-1 48 12X20 AL 42 - Trays |
| NAND512R4A2DDI6 | 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film |
| NAND512W3A0AN6 | 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| NAND512W3A0AN6E | 功能描述:閃存 2.7-3.6V 512M(64Mx8) RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復。