參數(shù)資料
型號(hào)： NAND512R3A2CN6F
廠商： 意法半導(dǎo)體
英文描述： 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
中文描述： 512兆位，528 Byte/264字的頁面，1.8V/3V，NAND閃存芯片
文件頁數(shù)： 16/51頁
文件大?。?/td> 517K
代理商： NAND512R3A2CN6F
NAND512-A2C
Device operations
23/51
6.3
Page Program
The Page Program operation is the standard operation to program data to the memory
array.
The main area of the memory array is programmed by page, however partial page
programming is allowed where any number of bytes (1 to 528) or words (1 to 264) can be
programmed.
The maximum number of consecutive partial page program operations allowed in the same
page is three. After exceeding this a Block Erase command must be issued before any
further program operations can take place in that page.
Before starting a Page Program operation a Pointer operation can be performed to point to
the area to be programmed. Refer to the Section 6.1: Pointer operations and Figure 7 for
details.
Each Page Program operation consists of five steps (see Figure 10):
1.
One bus cycle is required to setup the Page Program command
2.
Four bus cycles are then required to input the program address (refer to Table 6 and
Table 7)
3.
The data is then input (up to 528 Bytes/ 264 Words) and loaded into the Page Buffer
4.
One bus cycle is required to issue the confirm command to start the P/E/R Controller.
5.
The P/E/R Controller then programs the data into the array.
Once the program operation has started the Status Register can be read using the Read
Status Register command. During program operations the Status Register will only flag
errors for bits set to '1' that have not been successfully programmed to '0'.
During the program operation, only the Read Status Register and Reset commands will be
accepted, all other commands will be ignored.
Once the program operation has completed the P/E/R Controller bit SR6 is set to ‘1’ and the
Ready/Busy signal goes High.
The device remains in Read Status Register mode until another valid command is written to
the Command Interface.
Figure 10.
Page Program operation
1.
Before starting a Page Program operation a Pointer operation can be performed. Refer to Section 6.1: Pointer operations
for details.
I/O
RB
Address Inputs
SR0
ai07566
Data Input
10h
70h
80h
Page Program
Setup Code
Confirm
Code
Read Status Register
Busy
tBLBH2
(Program Busy time)
相關(guān)PDF資料
PDF描述
NAND512R3A2C 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND512R4A2CN6F 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND512R4A2CZA6E 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND512R4A2CZA6F 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND512R4A2C 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NAND512R3A2CZA6E 功能描述:IC FLASH 512MBIT 63VFBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ
NAND512R3A2CZA6F 制造商:Micron Technology Inc 功能描述:SLC NAND Flash Parallel 1.8V 512Mbit 64M x 8bit 15us 63-Pin VFBGA T/R
NAND512R3A2DDI6 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film
NAND512R3A2DZA6E 功能描述:IC FLASH 512MBIT 63VFBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.173"，4.40mm 寬） 供應(yīng)商設(shè)備封裝:8-MFP 包裝:帶卷 (TR)
NAND512R3A2SE06 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*