參數(shù)資料
型號(hào)： NAND04GW3C2AN6F
廠商： NUMONYX
元件分類： PROM
英文描述： 512M X 8 FLASH 3V PROM, 45 ns, PDSO48
封裝： 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48
文件頁(yè)數(shù)： 14/51頁(yè)
文件大小： 500K
代理商： NAND04GW3C2AN6F
NAND04GA3C2A, NAND04GW3C2A
6 Device operations
The Ready/Busy signal can be used to monitor the start of the operation. During the latency
period the Ready/Busy signal goes Low, after this the Ready/Busy signal goes High, even if
the device is internally downloading page n+1.
Once the Cache Read operation has started, the Status Register can be read using the
Read Status Register command.
During the operation, SR5 can be read, to find out whether the internal reading is ongoing
(SR5 = ‘0’), or has completed (SR5 = ‘1’), while SR6 indicates whether the Cache Register
is ready to download new data.
To exit the Cache Read operation an Exit Cache Read command must be issued (see
Figure 7.
Cache Read Operation
6.5
Page Program
The Page Program operation is the standard operation to program data to the memory
array. Generally, data is programmed sequentially, however the device does support
Random Input within a page.
The memory array is programmed by page, however partial page programming is allowed
where any number of Bytes (1 to 2112) can be programmed.
Only one consecutive partial page program operations is allowed on the same page. After
exceeding this a Block Erase command must be issued before any further program
operations can take place in that page.
I/O
RB
Address
Inputs
ai08661
00h
Read
Setup
Code
31h
Cache
Read
Confirm
Code
Busy
tBLBH1
(Read Busy time)
1st page
Data Output
2nd page
3rd page
last page
34h
Exit
Cache
Read
Code
Block N
相關(guān)PDF資料
PDF描述
NAND512R3A2CN6E 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND512R3A2CN6F 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND512R3A2C 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND512R4A2CN6F 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND512R4A2CZA6E 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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